Proton Radiation Effects in High-Power GaInP/AlGaInP Semiconductor Lasers

Abstract

High-power GalnP/AlGalnP broad-stripe lasers were irradiated with 200- and 10-MeV protons. The normalized threshold current linearly increases with increasing proton fluence. In GalnP lasers smaller increase in the threshold current was observed compared with high-power AlGaAs lasers. Proton energy dependence of the threshold current damage factor and forward bias annealing are discussed.