Room Temperature Dry Etching of INP-Based Semiconductors for Optoelectronic Device Fabrication Using Inductively Coupled Plasma

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.381165

Changzheng Sun, Jian Wang, Qiwei Zhou, B. Xiong, Yi Luo

引用次数: 3

Abstract

Dry etching of InP-based semiconductors is carried out by inductively coupled plasma (ICP) for optoelectronic device fabrication. The etching conditions for different chemical mixtures are optimized to ensure high anisotropy and smooth surface morphology.

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电感耦合等离子体制造光电器件用inp基半导体的室温干蚀刻

采用电感耦合等离子体(ICP)技术对inp基半导体进行了干法刻蚀。优化了不同化学混合物的蚀刻条件，以确保高各向异性和光滑的表面形貌。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

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