(Cl2:Ar) ICP/RIE Dry Etching of Al(Ga) Sb FOR AlSb/InAs HEMTs

Abstract

Dry etching of AlSb and Al_0.80Ga_0.20Sb has been performed by inductively coupled plasma/reactive ion etching based on a (Cl₂:Ar) gas mixture without addition of BCI₃. The dry etch process has been used to fabricate AlSb/InAs high electron mobility transistors isolated by a shallow mesa. Good DC/RF results, with extrinsic f_T/f_max= 135/105 GHz, have been measured for a 2times50 mum HEMT with a gate length of 295 nm.