基于inp集成电路的频率限制

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.380676

M. Rodwell, E. Lind, Z. Griffith, S. Bank, A. M. Crook, U. Singisetti, M. Wistey, G. Burek, A. Gossard

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引用次数: 18

摘要

我们研究了基于inp的双极和场效应晶体管的缩放限制，以增加器件带宽。对于基于inp的hbt，发射极和基极接触电阻率和IC热阻是增加器件带宽的主要限制;同时具有1-1.5太赫兹ftau和fmax的器件是可行的。开发具有太赫兹截止频率的InGaAs hemt或具有与22 nm ITRS目标一致的驱动电流的InGaAs沟道mosfet面临的主要挑战包括低二维有效态密度和窄量子阱中的高束缚态能量。

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Frequency Limits of InP-based Integrated Circuits

We examine the limits in scaling of InP-based bipolar and field effect transistors for increased device bandwidth. With InP-based HBTs, emitter and base contact resistivities and IC thermal resistance are the major limits to increased device bandwidth; devices with 1-1.5 THz simultaneous ftau and fmax are feasible. Major challenges faced in developing either InGaAs HEMTs having THz cutoff frequencies or InGaAs-channel MOSFETs having drive current consistent with the 22 nm ITRS objectives include the low two-dimensional effective density of states and the high bound state energies in narrow quantum wells.

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2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

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