Si衬底上生长的AlAs/GaAs/GaP异质结构纳米线

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.381205

G. Zhang, K. Tateno, H. Sanada, T. Sogawa, H. Nakano

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引用次数: 1

摘要

研究了以Au胶体为催化剂在Si表面生长GaP和AlAs/GaAs/GaP异质结构纳米线的过程。对于GaP纳米线的生长，我们发现了GaP纳米线与Si衬底之间的外延关系。发现AlAs/GaAs/GaP异质结构纳米线在Si上垂直生长。结构分析表明，异质界面的厚度分布在几个原子层内，GaAs和AlAs段的位错很少。

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AlAs/GaAs/GaP Heterostructure Nanowires Grown on Si Substrate

The growth of GaP and AlAs/GaAs/GaP heterostructure nanowires on Si using Au colloids as catalysts was investigated. For GaP nanowire growth, we found an epitaxial relationship between the GaP nanowires and Si substrate. The AlAs/GaAs/GaP heterostructure nanowires were found to grow vertically on Si. Structural analysis indicates that the hetero-interfaces are within several atomic layers in thickness and that the GaAs and AlAs segments have very few dislocations.

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2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

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