片状InGaAs单晶生长及1.3 μm激光二极管的制备

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.381192

K. Kinoshita, T. Ueda, S. Adachi, T. Masaki, S. Yoda, M. Arai, T. Watanabe, M. Yuda, Y. Kondo

{"title":"片状InGaAs单晶生长及1.3 μm激光二极管的制备","authors":"K. Kinoshita, T. Ueda, S. Adachi, T. Masaki, S. Yoda, M. Arai, T. Watanabe, M. Yuda, Y. Kondo","doi":"10.1109/ICIPRM.2007.381192","DOIUrl":null,"url":null,"abstract":"High quality InxGa1-xAs platy single crystals (x: 0.1 -0.2) were grown by the newly invented growth method named as the traveling liquidus-zone (TLZ) method. Laser diodes lasing at 1.3 μm wavelength were fabricated on these substrates and showed good temperature stability of output power as predicted.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Growth of Platy InGaAs Single Crystals and Fabrication of 1.3 μm Laser Diodes\",\"authors\":\"K. Kinoshita, T. Ueda, S. Adachi, T. Masaki, S. Yoda, M. Arai, T. Watanabe, M. Yuda, Y. Kondo\",\"doi\":\"10.1109/ICIPRM.2007.381192\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High quality InxGa1-xAs platy single crystals (x: 0.1 -0.2) were grown by the newly invented growth method named as the traveling liquidus-zone (TLZ) method. Laser diodes lasing at 1.3 μm wavelength were fabricated on these substrates and showed good temperature stability of output power as predicted.\",\"PeriodicalId\":352388,\"journal\":{\"name\":\"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-05-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2007.381192\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2007.381192","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

采用新发明的流动液相区(TLZ)生长方法，生长出高质量的InxGa1-xAs片状单晶(x: 0.1 -0.2)。在这些衬底上制备了波长为1.3 μm的激光二极管，并显示出良好的输出功率温度稳定性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Growth of Platy InGaAs Single Crystals and Fabrication of 1.3 μm Laser Diodes

High quality InxGa1-xAs platy single crystals (x: 0.1 -0.2) were grown by the newly invented growth method named as the traveling liquidus-zone (TLZ) method. Laser diodes lasing at 1.3 μm wavelength were fabricated on these substrates and showed good temperature stability of output power as predicted.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

自引率

0.00%

发文量