栅极长度为0.2-0.4 μ l /m的InAs/AlSb hemt的直流和射频性能

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.381124

M. Borg, E. Lefebvre, M. Malmkvist, L. Desplanque, X. Wallart, Y. Roelens, G. Dambrine, A. Cappy, S. Bollaert, J. Grahn

{"title":"栅极长度为0.2-0.4 μ l /m的InAs/AlSb hemt的直流和射频性能","authors":"M. Borg, E. Lefebvre, M. Malmkvist, L. Desplanque, X. Wallart, Y. Roelens, G. Dambrine, A. Cappy, S. Bollaert, J. Grahn","doi":"10.1109/ICIPRM.2007.381124","DOIUrl":null,"url":null,"abstract":"InAs/AlSb HEMTs with gate lengths in the range 225-335 nm processed on the same wafer have been investigated with respect to DC and RF performance. While the magnitude of the transconductance gm was similar for all gate lengths, the shortest gate length HEMT exhibited the highest extrinsic maximum frequency of oscillation fmax and extrinsic current gain cut-off frequency fT of 115 GHz and 165 GHz, respectively.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"138 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"DC and RF Performance of 0.2-0.4 /spl mu/m Gate Length InAs/AlSb HEMTs\",\"authors\":\"M. Borg, E. Lefebvre, M. Malmkvist, L. Desplanque, X. Wallart, Y. Roelens, G. Dambrine, A. Cappy, S. Bollaert, J. Grahn\",\"doi\":\"10.1109/ICIPRM.2007.381124\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"InAs/AlSb HEMTs with gate lengths in the range 225-335 nm processed on the same wafer have been investigated with respect to DC and RF performance. While the magnitude of the transconductance gm was similar for all gate lengths, the shortest gate length HEMT exhibited the highest extrinsic maximum frequency of oscillation fmax and extrinsic current gain cut-off frequency fT of 115 GHz and 165 GHz, respectively.\",\"PeriodicalId\":352388,\"journal\":{\"name\":\"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials\",\"volume\":\"138 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-05-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2007.381124\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2007.381124","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

研究了在同一晶圆上加工的栅极长度在225- 335nm范围内的InAs/AlSb hemt的直流和射频性能。而在所有栅极长度下，跨导gm的幅度相似，最短栅极长度的HEMT表现出最高的外部振荡最大频率fmax和外部电流增益截止频率fT，分别为115 GHz和165 GHz。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

DC and RF Performance of 0.2-0.4 /spl mu/m Gate Length InAs/AlSb HEMTs

InAs/AlSb HEMTs with gate lengths in the range 225-335 nm processed on the same wafer have been investigated with respect to DC and RF performance. While the magnitude of the transconductance gm was similar for all gate lengths, the shortest gate length HEMT exhibited the highest extrinsic maximum frequency of oscillation fmax and extrinsic current gain cut-off frequency fT of 115 GHz and 165 GHz, respectively.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

自引率

0.00%

发文量