Growth of Platy InGaAs Single Crystals and Fabrication of 1.3 μm Laser Diodes

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.381192

K. Kinoshita, T. Ueda, S. Adachi, T. Masaki, S. Yoda, M. Arai, T. Watanabe, M. Yuda, Y. Kondo

引用次数: 0

Abstract

High quality InxGa1-xAs platy single crystals (x: 0.1 -0.2) were grown by the newly invented growth method named as the traveling liquidus-zone (TLZ) method. Laser diodes lasing at 1.3 μm wavelength were fabricated on these substrates and showed good temperature stability of output power as predicted.

查看原文本刊更多论文

片状InGaAs单晶生长及1.3 μm激光二极管的制备

采用新发明的流动液相区(TLZ)生长方法，生长出高质量的InxGa1-xAs片状单晶(x: 0.1 -0.2)。在这些衬底上制备了波长为1.3 μm的激光二极管，并显示出良好的输出功率温度稳定性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

自引率

0.00%

发文量