具有InAlAsSb减应变层的InAs量子点的高光学质量

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.381149

P. Chiu, Wei-Sheng Liu, Meng-Jie Shiau, J. Chyi, Wen-Yen Chen, Hsing-Szu Chang, T. Hsu

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引用次数: 0

摘要

研究了薄应变还原层(SRL)对InAs/GaAs量子点(QDs)光学性能的影响。采用InAlAsSb SRL比InAlAs具有更高的发射强度和更好的尺寸均匀性。用InAlAsSb SRL封顶的InAs量子点显示出103 meV的大态分离和530 meV的热活化能。辐射效率和温度稳定性的提高归因于InAlAsSb SRL的高载流子限制和减少缺陷。

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High Optical Quality of InAs Quantum Dots with an InAlAsSb Strain-Reducing Layer

The effects of a thin InAlAsSb strain-reducing layer (SRL) on the optical properties of InAs/GaAs quantum dots (QDs) are studied. The adoption of the InAlAsSb SRL results in higher emission intensity and better size uniformity than its InAlAs counterpart. InAs QDs capped with the InAlAsSb SRL reveal a large state separation of 103 meV and thermal activation energy of 530 meV. The increase in radiative efficiency and temperature stability is attributed to high carrier confinement and reduced defects by the InAlAsSb SRL.

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2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

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