High Single Mode Power Wafer Fused InAlGaAs/InP -AlGaAs/GaAs VCSELs Emitting in the 1.3-1.6μm Wavelength Range

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.381216

A. Mereuta, V. Iakovlev, A. Caliman, P. Royo, A. Mircea, A. Rudra, G. Suruceanu, A. Syrbu, E. Kapon

引用次数: 5

Abstract

We demonstrate double wafer-fused 1.3 and 1.5 μm VCSELs showing record high single mode power up to 75°C, as well as polarization stability, modulation speed up to 10 Gb/s, and accurate wavelength selection capabilities.

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高单模功率晶圆融合InAlGaAs/InP -AlGaAs/GaAs vcsel，波长范围为1.3 ~ 1.6μm

我们展示了双晶片熔接的1.3和1.5 μm vcsel，具有高达75°C的单模功率，偏振稳定性，高达10 Gb/s的调制速度和精确的波长选择能力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

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