Effects of Zn- and S-Doping on Kinetics of GaAs Selective Area MOVPE

Abstract

The effects of Zn- and S-doping on surface reaction kinetics of GaAs selective area MOVPE have been examined at 650degC. The surface reaction rate constant of GaAs was extracted at various dopant input pressure and different mask width. The dopant atomic concentration in the epilayer was measured as functions of growth rate and mask pattern. These results show strong dependency on the doping behavior and thermodynamics.