{"title":"带宽超过100ghz的超快高效光电二极管","authors":"H. Bach","doi":"10.1109/ICIPRM.2007.381125","DOIUrl":null,"url":null,"abstract":"A family of ultrafast photodetectors based on evanescently coupled photodiodes, is described. The waveguide-integrated detectors are monolithically integrated with bias-Ts, coplanar transmission lines and MMI-couplers, employing semi-insulating optical waveguides on a semi-insulating InP:Fe substrate. The integration scheme is explained and demonstrated by examples of miniaturized ultra-broadband-, traveling wave-, and narrowband photodetectors, operating up to frequencies exceeding 120 GHz.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"276 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Ultrafast Efficient Photodiodes Exceeding 100 GHz Bandwidth\",\"authors\":\"H. Bach\",\"doi\":\"10.1109/ICIPRM.2007.381125\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A family of ultrafast photodetectors based on evanescently coupled photodiodes, is described. The waveguide-integrated detectors are monolithically integrated with bias-Ts, coplanar transmission lines and MMI-couplers, employing semi-insulating optical waveguides on a semi-insulating InP:Fe substrate. The integration scheme is explained and demonstrated by examples of miniaturized ultra-broadband-, traveling wave-, and narrowband photodetectors, operating up to frequencies exceeding 120 GHz.\",\"PeriodicalId\":352388,\"journal\":{\"name\":\"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials\",\"volume\":\"276 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-05-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2007.381125\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2007.381125","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A family of ultrafast photodetectors based on evanescently coupled photodiodes, is described. The waveguide-integrated detectors are monolithically integrated with bias-Ts, coplanar transmission lines and MMI-couplers, employing semi-insulating optical waveguides on a semi-insulating InP:Fe substrate. The integration scheme is explained and demonstrated by examples of miniaturized ultra-broadband-, traveling wave-, and narrowband photodetectors, operating up to frequencies exceeding 120 GHz.
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