在94 GHz时最小噪声系数为1.0 dB的InAlAs/InGaAs hemt

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.381121

T. Takahashi, M. Sato, K. Makiyama, T. Hirose, N. Hara

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引用次数: 11

摘要

作者使用带有薄肖特基势垒层的110纳米栅极InAlAs/InGaAs hemt在94 GHz时实现了1.0 dB的最小噪声系数(NFmin)。获得的NFmin是hemt报告的最低值之一。这种低噪声特性在涉及毫米波通信和图像传感器的应用中很有前景。

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InAlAs/InGaAs HEMTs with Minimum Noise Figure of 1.0 dB AT 94 GHz

The authors achieved a minimum noise figure (NFmin) of 1.0 dB at 94 GHz using 110 nm-gate InAlAs/InGaAs HEMTs with a thin Schottky barrier layer. The obtained NFmin is one of the lowest values ever reported for HEMTs. This low-noise property is promising for applications involving millimeter-wave communications and image sensors.

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2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

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