金属有机气相外延生长InP/InAs核心-多壳异质结构纳米线

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.381204

T. Fukui, P. Mohan, J. Motohisa

{"title":"金属有机气相外延生长InP/InAs核心-多壳异质结构纳米线","authors":"T. Fukui, P. Mohan, J. Motohisa","doi":"10.1109/ICIPRM.2007.381204","DOIUrl":null,"url":null,"abstract":"We report the growth and characteristics of InP nanowires and InP/InAs/InP core-multishell nanowire arrays by selective area metalorganic vapor phase epitaxy. InP hexagonal nanowires with (110) sidewall facets were successfully formed on (111)B InP substrates. The core-multishell nanowires were also formed composed of InAs tube-like layer buried in a higher bandgap InP nanowire. The precise control over nanowire growth direction and heterojunction formation enabled the successful fabrication of the nanostructure in which all the three layers were epitaxially grown without the assistance of any catalyst. The periodically aligned nanowires and core-multishell nanowires were highly uniform, and Wulzaite structures. 4 K photoluminescence measurements confirmed the formation of strained InAs quantum well on InP (110) sidewalls and the well widths corresponding to the PL peaks were in good agreement with calculated values.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"InP/InAs core-multishell heterostructure nanowires grown by metalorganic vapor phase epitaxy\",\"authors\":\"T. Fukui, P. Mohan, J. Motohisa\",\"doi\":\"10.1109/ICIPRM.2007.381204\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report the growth and characteristics of InP nanowires and InP/InAs/InP core-multishell nanowire arrays by selective area metalorganic vapor phase epitaxy. InP hexagonal nanowires with (110) sidewall facets were successfully formed on (111)B InP substrates. The core-multishell nanowires were also formed composed of InAs tube-like layer buried in a higher bandgap InP nanowire. The precise control over nanowire growth direction and heterojunction formation enabled the successful fabrication of the nanostructure in which all the three layers were epitaxially grown without the assistance of any catalyst. The periodically aligned nanowires and core-multishell nanowires were highly uniform, and Wulzaite structures. 4 K photoluminescence measurements confirmed the formation of strained InAs quantum well on InP (110) sidewalls and the well widths corresponding to the PL peaks were in good agreement with calculated values.\",\"PeriodicalId\":352388,\"journal\":{\"name\":\"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-05-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2007.381204\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2007.381204","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文报道了采用选择性区域金属有机气相外延技术制备InP纳米线和InP/InAs/InP核心-多壳纳米线阵列的生长和特性。在(111)B型InP衬底上成功地形成了具有(110)侧壁面的InP六角形纳米线。在高带隙的InP纳米线中埋有InAs管状层，形成了核-多壳纳米线。通过对纳米线生长方向和异质结形成的精确控制，可以在没有任何催化剂的情况下成功地制造出所有三层外延生长的纳米结构。周期性排列的纳米线和核-多壳纳米线具有高度均匀性，且具有钒钛结构。4 K光致发光测量证实在InP(110)侧壁上形成了应变InAs量子阱，PL峰对应的阱宽与计算值吻合较好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

InP/InAs core-multishell heterostructure nanowires grown by metalorganic vapor phase epitaxy

We report the growth and characteristics of InP nanowires and InP/InAs/InP core-multishell nanowire arrays by selective area metalorganic vapor phase epitaxy. InP hexagonal nanowires with (110) sidewall facets were successfully formed on (111)B InP substrates. The core-multishell nanowires were also formed composed of InAs tube-like layer buried in a higher bandgap InP nanowire. The precise control over nanowire growth direction and heterojunction formation enabled the successful fabrication of the nanostructure in which all the three layers were epitaxially grown without the assistance of any catalyst. The periodically aligned nanowires and core-multishell nanowires were highly uniform, and Wulzaite structures. 4 K photoluminescence measurements confirmed the formation of strained InAs quantum well on InP (110) sidewalls and the well widths corresponding to the PL peaks were in good agreement with calculated values.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

自引率

0.00%

发文量