激发光源对INGAASP/INP量子阱结构光致发光光谱的极化效应

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.381133

H. Imai, A. Motomura

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引用次数: 3

摘要

我们观察了InGaAsP/InP量子阱结构的光致发光光谱。通过改变激发光的入射角，观察到TE或TM模式激发的PL光谱峰移动。TM模式激发的PL谱峰比热耗散估计的谱峰向更长的波长移动。

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Polarization Effects of Ecitation Light Source on Photoluminescence Spectra of INGAASP/INP Quantum Well Structures

We have observed the photoluminescence (PL) spectra of InGaAsP/InP quantum well structures. PL spectra peak movements for TE or TM mode excitation are observed by changing the incident angle of the excitation light. The PL spectra peak for TM mode excitation moves toward the longer wavelength as compared with that estimated by the heat dissipation.

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2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

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