{"title":"高功率、宽调谐范围外腔波长可调谐激光器","authors":"K. Kudo, K. Sato","doi":"10.1109/ICIPRM.2007.381259","DOIUrl":null,"url":null,"abstract":"This paper reviews our recent activities on the development of high performance full-band wavelength tunable lasers. Our approach utilizes an external cavity configuration, which makes use of a liquid crystal (LC) tunable mirror. We also describe a gap mirror technology for integrating a functional section onto a laser gain chip. A semiconductor optical amplifier, implementing several functions, is integrated on the gain chip used in an external cavity laser, and demonstrated as a high-performance variable attenuator and booster amplifier. Control of the mirror properties through the gap geometry is demonstrated, and further optimization is realized by a gap-filling technique, which increases the output power to above 100 mW across the C-band.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"High Power and Wide Tuning Range External Cavity Wavelength Tunable Laser\",\"authors\":\"K. Kudo, K. Sato\",\"doi\":\"10.1109/ICIPRM.2007.381259\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reviews our recent activities on the development of high performance full-band wavelength tunable lasers. Our approach utilizes an external cavity configuration, which makes use of a liquid crystal (LC) tunable mirror. We also describe a gap mirror technology for integrating a functional section onto a laser gain chip. A semiconductor optical amplifier, implementing several functions, is integrated on the gain chip used in an external cavity laser, and demonstrated as a high-performance variable attenuator and booster amplifier. Control of the mirror properties through the gap geometry is demonstrated, and further optimization is realized by a gap-filling technique, which increases the output power to above 100 mW across the C-band.\",\"PeriodicalId\":352388,\"journal\":{\"name\":\"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-05-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2007.381259\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2007.381259","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High Power and Wide Tuning Range External Cavity Wavelength Tunable Laser
This paper reviews our recent activities on the development of high performance full-band wavelength tunable lasers. Our approach utilizes an external cavity configuration, which makes use of a liquid crystal (LC) tunable mirror. We also describe a gap mirror technology for integrating a functional section onto a laser gain chip. A semiconductor optical amplifier, implementing several functions, is integrated on the gain chip used in an external cavity laser, and demonstrated as a high-performance variable attenuator and booster amplifier. Control of the mirror properties through the gap geometry is demonstrated, and further optimization is realized by a gap-filling technique, which increases the output power to above 100 mW across the C-band.