退火后对砷化镓缓冲层上InAs量子点发射特性的影响

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.381185

R. Suzuki, T. Miyamoto, F. Koyama

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引用次数: 1

摘要

研究了热退火对在gaas缓冲层上生长的MOCVD生长的InAs量子点发光特性的影响。通过使用GaNAs缓冲液，观察到由于GaNAs的结晶性改善而抑制了PL强度的下降。

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Post-Annealing Effects on Emission Characteristics of InAs Quantum Dots on GaNAs Buffer Layer

Thermal annealing effects on PL characteristics of MOCVD grown InAs QD on GaNAs buffer layers were investigated. By using GaNAs buffer, the suppression of PL intensity degradation due to the crystalline improvement of GaNAs was observed.

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来源期刊

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

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