Zn和s掺杂对GaAs选择性区MOVPE动力学的影响

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.381188

Haizheng Song, Yunpeng Wang, M. Sugiyama, Y. Nakano, Y. Shimogaki

{"title":"Zn和s掺杂对GaAs选择性区MOVPE动力学的影响","authors":"Haizheng Song, Yunpeng Wang, M. Sugiyama, Y. Nakano, Y. Shimogaki","doi":"10.1109/ICIPRM.2007.381188","DOIUrl":null,"url":null,"abstract":"The effects of Zn- and S-doping on surface reaction kinetics of GaAs selective area MOVPE have been examined at 650degC. The surface reaction rate constant of GaAs was extracted at various dopant input pressure and different mask width. The dopant atomic concentration in the epilayer was measured as functions of growth rate and mask pattern. These results show strong dependency on the doping behavior and thermodynamics.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Effects of Zn- and S-Doping on Kinetics of GaAs Selective Area MOVPE\",\"authors\":\"Haizheng Song, Yunpeng Wang, M. Sugiyama, Y. Nakano, Y. Shimogaki\",\"doi\":\"10.1109/ICIPRM.2007.381188\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effects of Zn- and S-doping on surface reaction kinetics of GaAs selective area MOVPE have been examined at 650degC. The surface reaction rate constant of GaAs was extracted at various dopant input pressure and different mask width. The dopant atomic concentration in the epilayer was measured as functions of growth rate and mask pattern. These results show strong dependency on the doping behavior and thermodynamics.\",\"PeriodicalId\":352388,\"journal\":{\"name\":\"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials\",\"volume\":\"46 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-05-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2007.381188\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2007.381188","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

在650℃下研究了Zn和s掺杂对GaAs选择性区MOVPE表面反应动力学的影响。在不同的掺杂压力和不同的掩膜宽度下，提取了砷化镓的表面反应速率常数。测定了薄膜中掺杂物的原子浓度随生长速率和掩膜模式的变化。这些结果与掺杂行为和热力学密切相关。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Effects of Zn- and S-Doping on Kinetics of GaAs Selective Area MOVPE

The effects of Zn- and S-doping on surface reaction kinetics of GaAs selective area MOVPE have been examined at 650degC. The surface reaction rate constant of GaAs was extracted at various dopant input pressure and different mask width. The dopant atomic concentration in the epilayer was measured as functions of growth rate and mask pattern. These results show strong dependency on the doping behavior and thermodynamics.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

自引率

0.00%

发文量