InAlAs/InGaAs HEMTs with Minimum Noise Figure of 1.0 dB AT 94 GHz

Abstract

The authors achieved a minimum noise figure (NFmin) of 1.0 dB at 94 GHz using 110 nm-gate InAlAs/InGaAs HEMTs with a thin Schottky barrier layer. The obtained NFmin is one of the lowest values ever reported for HEMTs. This low-noise property is promising for applications involving millimeter-wave communications and image sensors.