微线和亚微网开口中InP的外延横向过度生长

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.381186

F. Olsson, M. Xie, F. Gerard, A. R. Alija, I. Prieto, P. Postigo, S. Lourdudoss

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引用次数: 6

摘要

为了在硅上实现大面积的InP，在不同方向和开口分别为100微米长和10微米宽的线上进行了InP在InP上的ELOG研究。这些知识已经转移到亚微网格结构上。通过这种方法，我们在网格图案的InP上得到了2微米厚的InP。该层具有室温光致发光(PL)，全宽半最大值为24 nm。我们提出，如果使用纳米尺寸的开口，这种强度可以增加。

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Epitaxial Lateral Overgrowth of InP in Micro Line and Submicro Mesh Openings

Towards achieving a large area of InP on silicon, a study of ELOG of InP on InP has been undertaken on lines with different orientations and with openings that are 100 mum long and 10 mum wide. This knowledge has been transposed on sub-micro mesh structures. By this method we have obtained 2 mum thick InP on a mesh patterned InP. The layer exhibits room temperature photoluminescence (PL) with a full width half maximum of 24 nm. We propose that this intensity can be increased if nano-sized openings are used.

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2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

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