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Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems最新文献

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A new approach to the analysis of SEU and SEL data to obtain the sensitive volume thickness [ICs] SEU和SEL数据分析获取敏感体厚度的新方法[ic]
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509797
J. Barak, J. Levinson, A. Akkerman, M. Hass, M. Victoria, A. Zentner, D. David, O. Even, Y. Lifshitz
{"title":"A new approach to the analysis of SEU and SEL data to obtain the sensitive volume thickness [ICs]","authors":"J. Barak, J. Levinson, A. Akkerman, M. Hass, M. Victoria, A. Zentner, D. David, O. Even, Y. Lifshitz","doi":"10.1109/RADECS.1995.509797","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509797","url":null,"abstract":"It is proposed to use short-range ions (along with long-range ions) to obtain the thickness of the sensitive volume, d, and the SEU (single event upset) and SEL (single event latchup) cross sections vs the energy deposited in this volume, /spl sigma//sub ion/(/spl epsi/). These /spl sigma//sub ion/(/spl epsi/) and d can be used for calculating the proton induced cross sections /spl sigma//sub p/. A study of the HM65162 CMOS SRAM demonstrates this method. The calculated /spl sigma//sub p/ is in good agreement with the experimental /spl sigma//sub p/.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116880132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
0.8 /spl mu/m HSOI4CB rad-tolerant technology for space applications: a solution to harden existing components with minimum design risk 用于空间应用的0.8 /spl mu/m HSOI4CB耐辐射技术:以最小的设计风险加固现有组件的解决方案
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509769
D. Dautriche, P. Lestrat, G. Josse, F. Debrie, G. Borel, E. Thouret
{"title":"0.8 /spl mu/m HSOI4CB rad-tolerant technology for space applications: a solution to harden existing components with minimum design risk","authors":"D. Dautriche, P. Lestrat, G. Josse, F. Debrie, G. Borel, E. Thouret","doi":"10.1109/RADECS.1995.509769","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509769","url":null,"abstract":"For several years, TCS has been involved in the transfer of epitaxial CMOS technology of microprocessors such as 68020 from Motorola and in the development of hardened Standard or ASIC products. The know-how which has bean acquired during these operations has led us to develop a rad tolerant process totally compatible in terms of design rules with standard CMOS process. Named HSOI4CB (CB for Compatible Bulk), this process is a 0.8 /spl mu/m SOI CMOS with 2 levels of metallization. The use of the HSOI4CB technology allows us, without any specific effort on the design, to reach hardening levels compatible with space requirements up to more than 100 Krads.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123963661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Using commercial semiconductor technologies in space 在太空中使用商用半导体技术
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509774
A. Johnston, C. Lee, B. Rax, D. Shaw
{"title":"Using commercial semiconductor technologies in space","authors":"A. Johnston, C. Lee, B. Rax, D. Shaw","doi":"10.1109/RADECS.1995.509774","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509774","url":null,"abstract":"New issues are discussed that must be considered when unhardened commercial technologies are used in space applications, as well as hardness assurance techniques. Large differences in dose-rate effects were observed for different circuit types from the same manufacturer, which may be due to differences in the thickness of isolation oxides used in processing. Data are presented for scaled MOS devices that show how total dose hardness and hard error rates are projected as devices are scaled to smaller feature size. Hard errors are expected to be a significant problem for devices with feature size below 0.6 /spl mu/m.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124019742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
Single event effect testing of the Intel 80386 family and the 80486 microprocessor Intel 80386家族和80486微处理器的单事件效应测试
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509788
A. Moran, K. Label, M. Gates, C. Seidleck, R. McGraw, M. Broida, J. Firer, S. Sprehn
{"title":"Single event effect testing of the Intel 80386 family and the 80486 microprocessor","authors":"A. Moran, K. Label, M. Gates, C. Seidleck, R. McGraw, M. Broida, J. Firer, S. Sprehn","doi":"10.1109/RADECS.1995.509788","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509788","url":null,"abstract":"We present single event effect test results for the Intel 80386 microprocessor, the 80387 coprocessor, the 82380 peripheral device, and on the 80486 microprocessor. Both single event upset and latchup conditions were monitored.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127314345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
A systematic investigation of the influence of processing parameters on the radiation hardness of reoxidized nitrided oxides 系统研究了工艺参数对再氧化氮化氧化物辐射硬度的影响
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509765
K. Neumeier, H. Bruemmer
{"title":"A systematic investigation of the influence of processing parameters on the radiation hardness of reoxidized nitrided oxides","authors":"K. Neumeier, H. Bruemmer","doi":"10.1109/RADECS.1995.509765","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509765","url":null,"abstract":"To optimize radiation hardness of reoxidized nitrided oxides (RNO) gate dielectrics the influence of processing parameters was systematically investigated. The dependence on oxidation temperature, nitridation temperature and time, and reoxidation temperature and time was determined by means of orthogonal matrices. The best samples exhibited a 30 times lower flatband voltage shift than the worst. Compared to hardened gate oxides optimized RNO dielectrics showed an improvement in radiation hardness by a factor of 7. At 1.5 Mrad(Si) the flatband voltage shift of 25 nm gate dielectrics was reduced to 150 mV.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126198424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Investigation of on-chip high temperature annealing of PMOS dosimeters PMOS剂量计片上高温退火的研究
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509821
A. Kelleher, W. Lane, L. Adams
{"title":"Investigation of on-chip high temperature annealing of PMOS dosimeters","authors":"A. Kelleher, W. Lane, L. Adams","doi":"10.1109/RADECS.1995.509821","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509821","url":null,"abstract":"Radiation sensitive pMOS dosimeters can measure only to a maximum dose which is determined by the type, sensitivity and irradiation conditions of the RADFET. On reaching the maximum dose, the dosimeters normally have to be replaced. The aim of this work is to study the feasibility of using on-chip poly-resistor heaters to anneal the dosimeters back to their pre-irradiation threshold voltage. This study shows that on-chip heating is a viable option to achieve post-irradiation annealing, and that the fading characteristics obtained agree with those of oven annealing from a previous study which was carried out on the NMRC RADFETs.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123106170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Radiation induced shift study in parasitic MOS structures by 2D numerical simulation 寄生MOS结构辐射诱导位移的二维数值模拟研究
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509749
R. Escoffier, A. Michez, G. Cirba, G. Bordure, V. Ferlet-Cavrois, P. Paillet, J. Leray
{"title":"Radiation induced shift study in parasitic MOS structures by 2D numerical simulation","authors":"R. Escoffier, A. Michez, G. Cirba, G. Bordure, V. Ferlet-Cavrois, P. Paillet, J. Leray","doi":"10.1109/RADECS.1995.509749","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509749","url":null,"abstract":"Charge trapping effects have been investigated by numerical simulation in parasitic lateral MOS transistor oxides under different radiation doses up to 60 krad. We bring out the position and the density of trapping charges influence on the parasitic conduction channels creation.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122238472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Radiation effects of 7.5-114 MeV protons incident on SiC LEDs 7.5- 114mev质子对SiC发光二极管的辐射效应
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509811
A. Houdayer, P. Hinrichsen, A. L. Barry
{"title":"Radiation effects of 7.5-114 MeV protons incident on SiC LEDs","authors":"A. Houdayer, P. Hinrichsen, A. L. Barry","doi":"10.1109/RADECS.1995.509811","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509811","url":null,"abstract":"The effect of proton irradiation on minority carrier lifetime in SiC light-emitting diodes has been measured for proton energies from 7.5 to 114 MeV. Small-fluence lifetime degradation as a function of proton energy and an observed non-linearity of the change in reciprocal lifetime with fluence are reported. Such data will be used for the interpretation of NIEL (Non-Ionizing Energy Loss) measurements in space, using SiC and GaAs LEDs which have been installed on the MIR space station.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122294259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
The effects of radiation on identical devices with different types of packaging 辐射对不同类型包装的相同设备的影响
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509784
S. Dowling, R. H. West
{"title":"The effects of radiation on identical devices with different types of packaging","authors":"S. Dowling, R. H. West","doi":"10.1109/RADECS.1995.509784","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509784","url":null,"abstract":"NPN transistor structures taken from the same wafer of silicon have been packaged in different ways. The variation of their response to total dose has been investigated for different bias conditions.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"159 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121177191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
32-bit processing unit for embedded space flight applications 嵌入式空间飞行应用的32位处理单元
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509779
V. Stachetti, J. Gaisler, G. Goller, C. Le Gargasson
{"title":"32-bit processing unit for embedded space flight applications","authors":"V. Stachetti, J. Gaisler, G. Goller, C. Le Gargasson","doi":"10.1109/RADECS.1995.509779","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509779","url":null,"abstract":"This paper describes the concurrent error-detection methods as well as the design and layout hardening techniques employed in the ERC 32, a 32-bit modular fault-tolerant processing core for embedded space flight applications. The core consists of three devices: an Integer Unit (IU), a Floating Point Unit (FPU), and a Memory Controller (MEC).","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123746663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
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