Radiation effects of 7.5-114 MeV protons incident on SiC LEDs

Abstract

The effect of proton irradiation on minority carrier lifetime in SiC light-emitting diodes has been measured for proton energies from 7.5 to 114 MeV. Small-fluence lifetime degradation as a function of proton energy and an observed non-linearity of the change in reciprocal lifetime with fluence are reported. Such data will be used for the interpretation of NIEL (Non-Ionizing Energy Loss) measurements in space, using SiC and GaAs LEDs which have been installed on the MIR space station.