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Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems最新文献

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Measurements of the radiation environment on the APEX satellite APEX卫星上辐射环境的测量
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509838
A. Sims, C. Dyer, C. Watson, C. Peerless
{"title":"Measurements of the radiation environment on the APEX satellite","authors":"A. Sims, C. Dyer, C. Watson, C. Peerless","doi":"10.1109/RADECS.1995.509838","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509838","url":null,"abstract":"The Cosmic Radiation Environment and Dosimetry experiment was built to accompany the CRUX (Cosmic Ray Upset) experiment on the USAF APEX satellite, launched in August 1994. Results of measurements of the space radiation environment are presented here whilst a companion paper presents CRUX measurements of upsets correlated with proton flux.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123965910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Gamma and neutron irradiation of optoelectronic devices 光电器件的伽马和中子辐照
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509837
H. Liscka, H. Henschel, O. Kohn, W. Lennartz, S. Metzger, H. U. Schmidt
{"title":"Gamma and neutron irradiation of optoelectronic devices","authors":"H. Liscka, H. Henschel, O. Kohn, W. Lennartz, S. Metzger, H. U. Schmidt","doi":"10.1109/RADECS.1995.509837","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509837","url":null,"abstract":"Active optoelectronic devices such as light emitting diodes (LEDs), laser diodes (LDs), and photodiodes (PDs) were evaluated for degradation under gamma and 14 MeV neutron irradiation. Total dose values and neutron fluences were chosen in such a way that we get estimates of the behaviour especially in space environments and nuclear engineering. The devices are designed for wavelengths from visible (450 nm) to infrared (1300 nm). LEDs and LDs show a reduction of light output power and LDs also a shift of threshold current after irradiation. With the LEDs we also measured the light power distribution on the chip surface. Irradiations of PDs with /sup 60/Co gammas up to a total dose of 10/sup 6/ Gy as well as irradiations with neutrons up to fluences of 3/spl times/10/sup 1/3 cm/sup -2/(1 MeV) lead to a strong increase of dark current.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123977082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Effect of radiation on the bandwidth of graded index fibres 辐射对梯度折射率光纤带宽的影响
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509835
H. Henschel, O. Kohn, H. Lischka, H. U. Schmidt, G. Kuyt, M. Emmerich, W. Hammerle, H. Hein
{"title":"Effect of radiation on the bandwidth of graded index fibres","authors":"H. Henschel, O. Kohn, H. Lischka, H. U. Schmidt, G. Kuyt, M. Emmerich, W. Hammerle, H. Hein","doi":"10.1109/RADECS.1995.509835","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509835","url":null,"abstract":"The influence of gamma radiation on the bandwidth of graded index fibres of four different manufacturers is measured at about 840 and 1300 nm wavelength. Increase as well as decrease is observed, depending on fibre type and wavelength. Differential mode attenuation and mode delay measurements, as well as examination of light emission distribution at the fibre endface before and after irradiation are performed to explain the results.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123195780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Avalanche semiconductor radiation detectors 雪崩半导体辐射探测器
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509820
Z. Sadygov, I. Zheleznykh, N. Malakhov, V. Jejer, T. A. Kirillova
{"title":"Avalanche semiconductor radiation detectors","authors":"Z. Sadygov, I. Zheleznykh, N. Malakhov, V. Jejer, T. A. Kirillova","doi":"10.1109/RADECS.1995.509820","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509820","url":null,"abstract":"Operation of novel avalanche semiconductor detector, produced on the basis of heterojunctions Si-SiC and Si-Si/sub x/O/sub y/ is described. A uniform avalanche process with gain from 10/sup 3/ to 10/sup 5/ can be reached depending on the conductivity of SiC and Si/sub x/O/sub y/ layers. Two types of avalanche photodetectors designed for applications in wavelength range 500-1000 nm with quantum efficiency 60/spl plusmn/10% (650 nm) and 200-700 mm with quantum efficiency 60/spl plusmn/15% (450 nm) are presented.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116494678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 26
Radiation induced thermally stimulated luminescence and conductivity in SIMOX oxides SIMOX氧化物中辐射诱导的热激发光和电导率
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509816
M. Martini, F. Meinardi, E. Rosetta, G. Spinolo, A. Vedda, J. Leray, P. Paillet, J. Autran, R. Devine
{"title":"Radiation induced thermally stimulated luminescence and conductivity in SIMOX oxides","authors":"M. Martini, F. Meinardi, E. Rosetta, G. Spinolo, A. Vedda, J. Leray, P. Paillet, J. Autran, R. Devine","doi":"10.1109/RADECS.1995.509816","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509816","url":null,"abstract":"Thermally Stimulated Luminescence (TSL) and Conductivity (TSC) induced by X-ray irradiation in SIMOX buried oxides have been studied from room temperature up to 400/spl deg/C. The characteristics of an X-ray induced TSL glow peak detected around 62/spl deg/C are presented: specifically, results on the emission wavelength and trap depth are shown. The X-ray induced TSC, observed at approximately 70/spl deg/C, is due to the same trapped species responsible of the TSL emission. The stability after irradiation and dose dependence of both TSL and TSC signals have also been investigated. The results have been compared with similar studies on high temperature annealed thermal SiO/sub 2/ films and bulk materials.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128035056","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Displacement effects induced by high energy protons in semiconductor electronic devices 半导体电子器件中高能质子引起的位移效应
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509745
J. Buisson, R. Gaillard, J. Jaureguy, G. Poirault
{"title":"Displacement effects induced by high energy protons in semiconductor electronic devices","authors":"J. Buisson, R. Gaillard, J. Jaureguy, G. Poirault","doi":"10.1109/RADECS.1995.509745","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509745","url":null,"abstract":"Degradation coefficients of semiconductor devices irradiated by high energy protons (10 MeV to 800 MeV) at Saturne and Van de Graaf facilities are measured and compared to the NIEL curve of protons in silicon. PIN dosimetry detector's direct voltage variation is modeled by using a device simulator code and the origin of the direct voltage variation with the fluence is clearly identified.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125601794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Shape of the response curve in SEU testing SEU试验中响应曲线的形状
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509809
P. Mcnulty, R. Reed, W. J. Beauvais, D. Roth
{"title":"Shape of the response curve in SEU testing","authors":"P. Mcnulty, R. Reed, W. J. Beauvais, D. Roth","doi":"10.1109/RADECS.1995.509809","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509809","url":null,"abstract":"An algorithm for predicting the shape of the curve describing the rise in SEU cross section with the LET of the incident particle from charge-collection measurements at a single LET, is described. Two tests of the algorithm are given, one on a bipolar SRAM and the other on a CMOS SRAM. Experimental data agrees with the algorithm for both cases. This agreement suggest that the slow rise in the SEU cross section with the LET of the incident particle is due to fluctuations in the charge collected with particles incident at the same LET.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131026165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Post-irradiation effects in a rad-hard technology 硬辐射技术中的辐照后效应
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509763
C. Chabrerie, O. Musseau, O. Flament, J. Leray, J. Boudenot, B. Shipman, H. Callewaert
{"title":"Post-irradiation effects in a rad-hard technology","authors":"C. Chabrerie, O. Musseau, O. Flament, J. Leray, J. Boudenot, B. Shipman, H. Callewaert","doi":"10.1109/RADECS.1995.509763","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509763","url":null,"abstract":"We studied radiation and post-irradiation effects in a CMOS rad-hard technology. The physical properties of charge detrapping in the gate oxide, investigated by isothermal and isochronal annealings, are dependent on the experimental procedure (bias, time storage, temperature, dose level).","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131182239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Single event damage effects in cryogenic CMOS microelectronics 低温CMOS微电子中的单事件损伤效应
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509808
J. Pickel
{"title":"Single event damage effects in cryogenic CMOS microelectronics","authors":"J. Pickel","doi":"10.1109/RADECS.1995.509808","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509808","url":null,"abstract":"Cryogenic microelectronics, as used in focal plane arrays in space-based optical sensors, are potentially vulnerable to single event damage effects from energetic heavy ions and protons. Results are presented for numerical simulation and analytical assessment of potential effects in generic FPAs. Present-generation FPAs are not likely to be affected by single event damage, but the potential will increase as minimum transistor size is made smaller.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131088995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Particle contamination measurements around hadron beams used for irradiation of silicon detectors for the LHC 用于大型强子对撞机硅探测器辐照的强子束周围粒子污染测量
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509759
E. Len-Florian, C. Leroy
{"title":"Particle contamination measurements around hadron beams used for irradiation of silicon detectors for the LHC","authors":"E. Len-Florian, C. Leroy","doi":"10.1109/RADECS.1995.509759","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509759","url":null,"abstract":"While LHC silicon detector prototypes were irradiated with pions and protons for radiation damage studies at Villigen-PSI and CERN-PS, the nearby beam contaminations by neutrons, protons and photons was measured by means of various activation foils and dosimeters. The estimated fluxes due to neutron and proton contamination are a few percent of the pion and proton fluxes given to the silicon detectors. In all cases, the low energy neutron component is found to be dominant.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115209275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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