Avalanche semiconductor radiation detectors

Abstract

Operation of novel avalanche semiconductor detector, produced on the basis of heterojunctions Si-SiC and Si-Si/sub x/O/sub y/ is described. A uniform avalanche process with gain from 10/sup 3/ to 10/sup 5/ can be reached depending on the conductivity of SiC and Si/sub x/O/sub y/ layers. Two types of avalanche photodetectors designed for applications in wavelength range 500-1000 nm with quantum efficiency 60/spl plusmn/10% (650 nm) and 200-700 mm with quantum efficiency 60/spl plusmn/15% (450 nm) are presented.