半导体电子器件中高能质子引起的位移效应

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI:10.1109/RADECS.1995.509745

J. Buisson, R. Gaillard, J. Jaureguy, G. Poirault

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引用次数: 0

摘要

在Saturne和Van de Graaf装置上测量了高能质子(10mev ~ 800mev)辐照半导体器件的降解系数，并与质子在硅中的NIEL曲线进行了比较。利用器件仿真程序对PIN剂量仪的直流电压变化进行了模拟，明确了直流电压随通量变化的来源。

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Displacement effects induced by high energy protons in semiconductor electronic devices

Degradation coefficients of semiconductor devices irradiated by high energy protons (10 MeV to 800 MeV) at Saturne and Van de Graaf facilities are measured and compared to the NIEL curve of protons in silicon. PIN dosimetry detector's direct voltage variation is modeled by using a device simulator code and the origin of the direct voltage variation with the fluence is clearly identified.

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Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems

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