SIMOX氧化物中辐射诱导的热激发光和电导率

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI:10.1109/RADECS.1995.509816

M. Martini, F. Meinardi, E. Rosetta, G. Spinolo, A. Vedda, J. Leray, P. Paillet, J. Autran, R. Devine

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引用次数: 5

摘要

本文研究了室温至400℃的SIMOX埋置氧化物在x射线照射下的热激发发光(TSL)和电导率(TSC)。本文介绍了在62/spl度/C附近探测到的x射线诱导TSL发光峰的特征:具体地说，给出了发射波长和陷阱深度的结果。在约70/spl度/C下观测到的x射线诱导的TSC是由于引起TSL发射的相同被困物质。研究了TSL和TSC信号辐照后的稳定性和剂量依赖性。结果与高温退火热SiO/ sub2 /薄膜和块状材料的类似研究结果进行了比较。

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Radiation induced thermally stimulated luminescence and conductivity in SIMOX oxides

Thermally Stimulated Luminescence (TSL) and Conductivity (TSC) induced by X-ray irradiation in SIMOX buried oxides have been studied from room temperature up to 400/spl deg/C. The characteristics of an X-ray induced TSL glow peak detected around 62/spl deg/C are presented: specifically, results on the emission wavelength and trap depth are shown. The X-ray induced TSC, observed at approximately 70/spl deg/C, is due to the same trapped species responsible of the TSL emission. The stability after irradiation and dose dependence of both TSL and TSC signals have also been investigated. The results have been compared with similar studies on high temperature annealed thermal SiO/sub 2/ films and bulk materials.

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Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems

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