Post-irradiation effects in a rad-hard technology

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI:10.1109/RADECS.1995.509763

C. Chabrerie, O. Musseau, O. Flament, J. Leray, J. Boudenot, B. Shipman, H. Callewaert

引用次数: 6

Abstract

We studied radiation and post-irradiation effects in a CMOS rad-hard technology. The physical properties of charge detrapping in the gate oxide, investigated by isothermal and isochronal annealings, are dependent on the experimental procedure (bias, time storage, temperature, dose level).

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硬辐射技术中的辐照后效应

我们研究了CMOS辐射硬技术中的辐射和后辐射效应。通过等温和等时退火研究了栅极氧化物中电荷脱陷的物理性质，这取决于实验程序(偏置、时间存储、温度、剂量水平)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems

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