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Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems最新文献

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Development of facilities for investigating single-event effects 发展用于调查单事件效应的设备
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509758
I. Nashiyama, T. Hirao, H. Itoh, T. Kamiya, I. Naito, S. Matsuda
{"title":"Development of facilities for investigating single-event effects","authors":"I. Nashiyama, T. Hirao, H. Itoh, T. Kamiya, I. Naito, S. Matsuda","doi":"10.1109/RADECS.1995.509758","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509758","url":null,"abstract":"Energetic heavy-ion irradiation apparatus has been developed for single-event effects (SEE) testing. We have applied three irradiation methods, scattered-ion irradiation method, a recoiled-atom irradiation method, and a direct-beam irradiation method to perform SEE testing efficiently. For the study of basic mechanisms of single-event upset, we have developed a transient current measurement system by combining focused high-energy ion microbeams with a wide bandwidth digitizing sampling technique. The waveform of transient current induced by an energetic heavy-ion strike on a silicon test diode was measured with 1 /spl mu/m positioning accuracy. We succeeded in experimental separation of the delayed diffusion current from the prompt drift and funneling currents.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123624444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Single event effect flight data analysis of multiple NASA spacecraft and experiments; implications to spacecraft electrical designs NASA多航天器单事件效应飞行数据分析与实验对航天器电气设计的启示
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509840
C. Seidleck, K. Label, A. Moran, M. Gates, J. Barth, E. Stassinopoulos, T. Gruner
{"title":"Single event effect flight data analysis of multiple NASA spacecraft and experiments; implications to spacecraft electrical designs","authors":"C. Seidleck, K. Label, A. Moran, M. Gates, J. Barth, E. Stassinopoulos, T. Gruner","doi":"10.1109/RADECS.1995.509840","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509840","url":null,"abstract":"We present the spaceflight Single Event Effect (SEE) data for the emerging commercial technologies utilized in multiple NASA spacecraft and experiments. Analyses of device performance as well as design implications of the flight results are discussed.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134082117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
A dosimetric evaluation of the RADPAK/sup TM/ using mono-energetic electrons and protons 用单能电子和质子对RADPAK/sup TM/进行剂量学评价
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509818
L. Adams, R. Nickson, A. Kelleher, D. G. Millward, D. Strobel, D. Czajkowski
{"title":"A dosimetric evaluation of the RADPAK/sup TM/ using mono-energetic electrons and protons","authors":"L. Adams, R. Nickson, A. Kelleher, D. G. Millward, D. Strobel, D. Czajkowski","doi":"10.1109/RADECS.1995.509818","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509818","url":null,"abstract":"This paper presents the results of an evaluation of the Space Electronics Inc, RADPAK/sup TM/ using electron and proton accelerators. 'RADFET' dosimeters were used as test vehicles in conventional and RADPAK/sup TM/ packages to allow a direct comparison of absorbed dose with different shielding. Electron results are compared with the AE-8 space spectrum and proton results verified by transport calculations.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130014969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
SEU and latch-up results on transputers 对讲机的定位和锁定结果
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509800
F. Bezerra, R. Velazco, A. Assoum, D. Benezech
{"title":"SEU and latch-up results on transputers","authors":"F. Bezerra, R. Velazco, A. Assoum, D. Benezech","doi":"10.1109/RADECS.1995.509800","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509800","url":null,"abstract":"IMST805 and IMST225 transputers are being considered for space applications. In a view to predict their in orbit behaviour, their sensitivity to single event phenomena has been evaluated under heavy ion irradiation.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117130024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
Evidence of the sensitivity inhomogeneity of power MOSFETs' cells to single event burnout 功率mosfet电池对单事件烧坏的灵敏度不均匀性的证据
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509807
C. Dachs, F. Roubaud, J. Palau, G. Bruguier, J. Gasiot, M. Calvet, P. Calvel, P. Tastet
{"title":"Evidence of the sensitivity inhomogeneity of power MOSFETs' cells to single event burnout","authors":"C. Dachs, F. Roubaud, J. Palau, G. Bruguier, J. Gasiot, M. Calvet, P. Calvel, P. Tastet","doi":"10.1109/RADECS.1995.509807","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509807","url":null,"abstract":"Results obtained under heavy ion irradiation of one cell or different areas of a power MOSFET are presented. The observed responses confirm that the burnout current evolution depends on the impact localisation with respect to the cell and show that the sensitivity to burnout is variable over the transistor surface.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121311036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Worst case irradiation on MOS components: implication on CMOS4000B technology total dose testing MOS组件的最坏情况辐照:对CMOS4000B技术总剂量试验的启示
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509783
D. Gaudin, J. Boyer, J.P. Dayid, J. Vadrot
{"title":"Worst case irradiation on MOS components: implication on CMOS4000B technology total dose testing","authors":"D. Gaudin, J. Boyer, J.P. Dayid, J. Vadrot","doi":"10.1109/RADECS.1995.509783","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509783","url":null,"abstract":"Electrical behaviour observation was performed on CMOS4000B technology transistors and devices during a Co60 irradiation. Radiation test method determination was based on oxide trapped charges and interface states evolution at different irradiation dose rates.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124827835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A MOSFET model including total dose effects 包含总剂量效应的MOSFET模型
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509747
P. Villard, R. Kielbasa
{"title":"A MOSFET model including total dose effects","authors":"P. Villard, R. Kielbasa","doi":"10.1109/RADECS.1995.509747","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509747","url":null,"abstract":"In most of the MOSFET models, it is assumed that the rad-induced interface state energy distribution is uniform. This assumption is rarely valid. So, in order to study the influence of the distribution shape, we propose a physical one-dimensional MOSFET model based on Pao and Sah's [1966] analysis. After a description of the model and simulation environment, we give theoretical results about the interface trap effects on weak inversion V-I characteristics, then we compare simulation results to experimental data. Finally, we propose a new method for estimating the total interface charge, including oxide trapped holes and interface states, as a function of the surface potential.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126859057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Substrate effects on the degradation of irradiated Si diodes 衬底对辐照硅二极管降解的影响
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509754
H. Ohyama, J. Vanhellemont, E. Simoen, C. Claeys, Y. Takami, K. Hayama, K. Yoshimoto, H. Sunaga, K. Kobayashi
{"title":"Substrate effects on the degradation of irradiated Si diodes","authors":"H. Ohyama, J. Vanhellemont, E. Simoen, C. Claeys, Y. Takami, K. Hayama, K. Yoshimoto, H. Sunaga, K. Kobayashi","doi":"10.1109/RADECS.1995.509754","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509754","url":null,"abstract":"Irradiation damage in n/sup +/p and p/sup +/n Si diodes by 1-MeV fast neutrons and 1 to 2-MeV electrons is studied as a function of type of Si substrate and radiation source. The degradation of the electrical performance of diodes by irradiation increases with increasing fluence and is much larger for CZ-Si diodes than for FZ-Si diodes. The difference of radiation damage is thought to be due to the formation of lattice defects which are associated with the creation of oxygen related complexes. The degraded performance recovers by thermal annealing. The activation energy of reverse current recovery of n/sup +/p Si diodes irradiated by neutrons with a fluence of 1/spl times/10/sup 13/ n/cm/sup 2/ is calculated to be 0.35 and 0.19 eV.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"124 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127412371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Modification of single event upset cross section of an SRAM at high frequencies 高频单事件打乱SRAM横截面的修正
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509798
S. Buchner, A. Campbell, D. McMorrow, J. Melinger, H. Masti, Y.J. Chen
{"title":"Modification of single event upset cross section of an SRAM at high frequencies","authors":"S. Buchner, A. Campbell, D. McMorrow, J. Melinger, H. Masti, Y.J. Chen","doi":"10.1109/RADECS.1995.509798","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509798","url":null,"abstract":"Single event upset cross sections exhibit a clock frequency dependence, the origins of which have been investigated in a CMOS SRAM, both with a pulsed laser synchronized to the operation of the circuit and with a circuit simulator modeling program.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":" 13","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113950358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
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