MOS组件的最坏情况辐照:对CMOS4000B技术总剂量试验的启示

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI:10.1109/RADECS.1995.509783

D. Gaudin, J. Boyer, J.P. Dayid, J. Vadrot

{"title":"MOS组件的最坏情况辐照:对CMOS4000B技术总剂量试验的启示","authors":"D. Gaudin, J. Boyer, J.P. Dayid, J. Vadrot","doi":"10.1109/RADECS.1995.509783","DOIUrl":null,"url":null,"abstract":"Electrical behaviour observation was performed on CMOS4000B technology transistors and devices during a Co60 irradiation. Radiation test method determination was based on oxide trapped charges and interface states evolution at different irradiation dose rates.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Worst case irradiation on MOS components: implication on CMOS4000B technology total dose testing\",\"authors\":\"D. Gaudin, J. Boyer, J.P. Dayid, J. Vadrot\",\"doi\":\"10.1109/RADECS.1995.509783\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electrical behaviour observation was performed on CMOS4000B technology transistors and devices during a Co60 irradiation. Radiation test method determination was based on oxide trapped charges and interface states evolution at different irradiation dose rates.\",\"PeriodicalId\":310087,\"journal\":{\"name\":\"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-09-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RADECS.1995.509783\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADECS.1995.509783","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

对CMOS4000B技术晶体管和器件在Co60辐照下的电学行为进行了观察。辐射试验方法的确定是基于不同辐照剂量率下氧化物捕获电荷和界面状态的演变。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Worst case irradiation on MOS components: implication on CMOS4000B technology total dose testing

Electrical behaviour observation was performed on CMOS4000B technology transistors and devices during a Co60 irradiation. Radiation test method determination was based on oxide trapped charges and interface states evolution at different irradiation dose rates.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems

自引率

0.00%

发文量