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Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems最新文献

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Charge-collection characteristics of GaAs heterostructure FETs fabricated with a low-temperature grown GaAs buffer layer 低温生长GaAs缓冲层制备GaAs异质结构场效应管的电荷收集特性
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509805
D. McMorrow, T. Weatherford, A. Knudson, S. Buchner, J. Melinger, L. Tran, A. Campbell, P. Marshall, C. Dale, A. Peczalski, S. Baiers
{"title":"Charge-collection characteristics of GaAs heterostructure FETs fabricated with a low-temperature grown GaAs buffer layer","authors":"D. McMorrow, T. Weatherford, A. Knudson, S. Buchner, J. Melinger, L. Tran, A. Campbell, P. Marshall, C. Dale, A. Peczalski, S. Baiers","doi":"10.1109/RADECS.1995.509805","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509805","url":null,"abstract":"The charge-collection characteristics of GaAs heterojunction-insulated-gate FETs fabricated with a low-temperature grown GaAs (LT GaAs) buffer layer are investigated as a function of device bias conditions for laser and ion irradiation. In accordance with earlier measurements, the LT GaAs FETs of this study exhibit a significant reduction in charge-collection efficiencies when compared to those of conventional FETs. This reduction in collected charge is associated with the efficient reduction of charge-enhancement mechanisms in the LT GaAs devices. It is revealed that charge-enhancement processes do occur in the LT devices under certain bias conditions, although at significantly reduced levels when compared to conventional FETs.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115632740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
TILMICRO, a new SEU and latch-up tester for microprocessors: initial results on 32-bit floating point DSPs TILMICRO，一个新的SEU和锁存器测试微处理器:对32位浮点dsp的初步结果
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509793
F. Bezerra, D. Hardy, R. Velazco, H. Ziade
{"title":"TILMICRO, a new SEU and latch-up tester for microprocessors: initial results on 32-bit floating point DSPs","authors":"F. Bezerra, D. Hardy, R. Velazco, H. Ziade","doi":"10.1109/RADECS.1995.509793","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509793","url":null,"abstract":"As the need for 32 bit DSPs increases for on board equipment, we have built a new SEU and latch-up tester that is able to test processors such as these DSPs. The first results have been obtained on the 96002 from Motorola and the ADSP21020 from Analog Devices.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130908306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Radiation tolerance of current CCD-based CCTV cameras 当前基于ccd的CCTV摄像机的辐射容限
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509785
R. Sharp, S.L. Pater, D. Garlick
{"title":"Radiation tolerance of current CCD-based CCTV cameras","authors":"R. Sharp, S.L. Pater, D. Garlick","doi":"10.1109/RADECS.1995.509785","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509785","url":null,"abstract":"Twelve types of CCTV camera have been radiation tested using a standard test procedure. The results of these tests are presented as a guide to the generic radiation tolerance of such cameras.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130237122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Fast techniques for MOSFET response prediction in space environments 空间环境中MOSFET响应预测的快速技术
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509776
V. Pershenkov, V. Belyakov, M. Popov, S. Cherepko, I. N. Shvetzov-Shilovsky
{"title":"Fast techniques for MOSFET response prediction in space environments","authors":"V. Pershenkov, V. Belyakov, M. Popov, S. Cherepko, I. N. Shvetzov-Shilovsky","doi":"10.1109/RADECS.1995.509776","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509776","url":null,"abstract":"The theoretical and practical aspects of two techniques for low dose rate effects investigations in MOS circuits are discussed. The first technique is based on the use of linear response theory together with the conversion model of interface states formation. The cornerstone of the second technique is the radiation induced charge neutralization phenomenon under negative oxide electric field. The application of test techniques for circuit simulation and the extraction of SPICE model parameters is also discussed.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"26 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126131736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Model of single event upsets induced by space protons in electronic devices 电子设备中空间质子引起的单事件扰动模型
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509810
B. Doucin, T. Carrière, C. Poivey, P. Garnier, J. Beaucour, Y. Patin
{"title":"Model of single event upsets induced by space protons in electronic devices","authors":"B. Doucin, T. Carrière, C. Poivey, P. Garnier, J. Beaucour, Y. Patin","doi":"10.1109/RADECS.1995.509810","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509810","url":null,"abstract":"An evaluation of energy deposition induced by p-Si nuclear reactions as a function of circuit sensitive thickness and proton incident energy is performed to develop a model which predicts proton-induced SEU cross-sections from heavy ion experiment. A set of experimental validation is presented showing the convenient accuracy of the model.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123827454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 39
Proton SEU test of MC68020, MC68882, TMS320C25 on the ARIANE 5 launcher on board computer (OBC) and inertial reference system (SRI) MC68020、MC68882、TMS320C25在阿丽亚娜5号运载火箭机载计算机(OBC)和惯性参考系统(SRI)上的质子单单元测试
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509792
C. Poivey, O. Notebaert, P. Garnier, T. Carrière, J. Beaucour, B. Steiger, J. M. Salle, F. Bezerra, R. Ecoffet, B. Cadot, M. Calvet, P. Simon
{"title":"Proton SEU test of MC68020, MC68882, TMS320C25 on the ARIANE 5 launcher on board computer (OBC) and inertial reference system (SRI)","authors":"C. Poivey, O. Notebaert, P. Garnier, T. Carrière, J. Beaucour, B. Steiger, J. M. Salle, F. Bezerra, R. Ecoffet, B. Cadot, M. Calvet, P. Simon","doi":"10.1109/RADECS.1995.509792","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509792","url":null,"abstract":"The ARIANE 5 on board computer (OBC) and Inertial Reference System (SRI) are based on Motorola MC68020 processor and MC68882 coprocessor. The SRI data acquisition board also uses the DSP TMS320C25 from Texas Instruments. These devices were characterized for proton induced SEUs. But representativeness of SEU test results on processors was questioned during ARIANE 5 studies. Protons test of these devices were also performed in the actual equipment with flight (or representative of) software. The results show that the OBC and the inertial reference system can satisfy the requirements of the ARIANE 5 missions.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125820298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
SEE data from the APEX Cosmic Ray Upset Experiment: predicting the performance of commercial devices in space 来自APEX宇宙射线扰动实验的SEE数据:预测商业设备在太空中的性能
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509839
J. Adolphsen, J. Barth, E. Stassinopoulos, T. Gruner, M. Wennersten, K. Label, C. Seidleck
{"title":"SEE data from the APEX Cosmic Ray Upset Experiment: predicting the performance of commercial devices in space","authors":"J. Adolphsen, J. Barth, E. Stassinopoulos, T. Gruner, M. Wennersten, K. Label, C. Seidleck","doi":"10.1109/RADECS.1995.509839","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509839","url":null,"abstract":"This paper presents additional results from the CRUX experiment on the US Air Force APEX satellite. The experiment monitors single event effects on 256 Kbit and 1 Mbit SRAMs. It is shown that trapped protons dominate the single event upset rates, as evidenced by correlation with measured proton flux peaks and with flux contours calculated with the AP8 model. The responses of some part type lots were surprising because of the wide variation exhibited in upset rates from device to device within a part type, and because of a wide disparity in upset rates, depending on logic state. The use of generic ground test data in error rate predictions for a mission may be acceptable, but may also result in answers whose inaccuracies are unknown and could be unacceptably large.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126955550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
On radiation damage of scintillating organic fibres in dependence on energetic electron bombardment 基于高能电子轰击的闪烁有机纤维辐射损伤研究
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509832
H. Klose, M. Krause, W. Pfeiffer, J. Rauchfuss, G. Sinn, D. Fink, M. Wilhelm
{"title":"On radiation damage of scintillating organic fibres in dependence on energetic electron bombardment","authors":"H. Klose, M. Krause, W. Pfeiffer, J. Rauchfuss, G. Sinn, D. Fink, M. Wilhelm","doi":"10.1109/RADECS.1995.509832","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509832","url":null,"abstract":"New experimental results on in-situ observations of degradation of scintillating light yield and on time-compressed ageing and recovery studies of organic blue and green scintillating fibres generated by 16 MeV electron irradiation are reported. Only for low current densities the observed in-situ degradation has a nearly linear decrease. Typical self annealing effects can be characterized by a logarithmic law. Total recovery of optical properties for blue and green scintillators does not occur for energy doses above 10 Mrad and 20 Mrad, respectively.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129676916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
The use of pMOS dosimeters at megagray total doses 以兆兆总剂量使用pMOS剂量计
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509826
R. Sharp, S.L. Pater
{"title":"The use of pMOS dosimeters at megagray total doses","authors":"R. Sharp, S.L. Pater","doi":"10.1109/RADECS.1995.509826","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509826","url":null,"abstract":"The response of MOS dosimeters manufactured by REM and NMRC has been assessed at total doses of up to 1 MGy for use in nuclear power industry applications. This has shown that existing devices can be used for some tasks but further development and qualification is required for others.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129211965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Simulation of heavy ion latchup cross section curves 重离子闭锁截面曲线模拟
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509803
H. de La Rochette, G. Bruguier, J. Palau, J. Gasiot, R. Ecoffet
{"title":"Simulation of heavy ion latchup cross section curves","authors":"H. de La Rochette, G. Bruguier, J. Palau, J. Gasiot, R. Ecoffet","doi":"10.1109/RADECS.1995.509803","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509803","url":null,"abstract":"The latchup sensitivity of 1 /spl mu/m CMOS structures when subjected to heavy ion irradiation is studied. Cross section curves and threshold LETs obtained by 2D and 3D device simulations are compared to the experimental results.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114097522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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