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Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems最新文献

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Radiation induced degradation in power MOSFETs 功率mosfet的辐射诱导退化
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509780
E. Bendada, M. de la Bardonnie, P. Mialhe, J. Charles, E. Blampain, A. Hoffmann
{"title":"Radiation induced degradation in power MOSFETs","authors":"E. Bendada, M. de la Bardonnie, P. Mialhe, J. Charles, E. Blampain, A. Hoffmann","doi":"10.1109/RADECS.1995.509780","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509780","url":null,"abstract":"An innovative method for device characterization is experimented to determine the radiation response of power MOSFETs. The degradation of body-drain junction parameters by ionizing radiation depends on the total energy to which the material has been subjected.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116422743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Serendipitous SEU hardening of resistive load SRAMs 电阻负载sram的偶然性SEU硬化
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509802
R. Koga, J. Kirshman, S. D. Pinkerton, S. Hansel, K. Crawford, W. Crain
{"title":"Serendipitous SEU hardening of resistive load SRAMs","authors":"R. Koga, J. Kirshman, S. D. Pinkerton, S. Hansel, K. Crawford, W. Crain","doi":"10.1109/RADECS.1995.509802","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509802","url":null,"abstract":"High and low resistive load versions of Micron Technology's MT5C1008C(128 K/spl times/8) and MT5C2561C(256 K/spl times/1) SRAMs were tested for SEU vulnerability. Contrary to computer simulation results, SEU susceptibility decreased with increasing resistive load A substantially larger number of multiple-bit errors were observed for the low resistive load SRAMs, which also exhibited a \"1\"/spl rarr/\"0\" to \"0\"/spl rarr/\"1\" bit error ratio close to unity; in contrast, the high resistive load devices displayed a pronounced error bit polarity effect. Two distinct upset mechanisms are proposed to account for these observations.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115082599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Recent advances in understanding total-dose effects in bipolar transistors 双极晶体管总剂量效应的最新研究进展
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509744
peixiong zhao
{"title":"Recent advances in understanding total-dose effects in bipolar transistors","authors":"peixiong zhao","doi":"10.1109/RADECS.1995.509744","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509744","url":null,"abstract":"Gain degradation in irradiated bipolar transistors can be a significant problem, particularly in linear integrated circuits. In many bipolar technologies, the degradation is greater for irradiation at low dose rates than it is for typical laboratory dose rates. Ionizing radiation causes the base current in bipolar transistors to increase, due to the presence of net positive charge in the oxides covering sensitive device areas and increases in surface recombination velocity. Understanding the mechanisms responsible for radiation-induced gain degradation in bipolar transistors is important in developing appropriate hardness assurance methods. This paper reviews recent modeling and experimental work, with the emphasis on low-dose-rate effects. A promising hardness assurance method based on irradiation at elevated temperatures is described.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114161353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 81
Radiation tolerance of current CCD-based CCTV cameras 当前基于ccd的CCTV摄像机的辐射容限
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509785
R. Sharp, S.L. Pater, D. Garlick
{"title":"Radiation tolerance of current CCD-based CCTV cameras","authors":"R. Sharp, S.L. Pater, D. Garlick","doi":"10.1109/RADECS.1995.509785","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509785","url":null,"abstract":"Twelve types of CCTV camera have been radiation tested using a standard test procedure. The results of these tests are presented as a guide to the generic radiation tolerance of such cameras.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130237122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
TILMICRO, a new SEU and latch-up tester for microprocessors: initial results on 32-bit floating point DSPs TILMICRO，一个新的SEU和锁存器测试微处理器:对32位浮点dsp的初步结果
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509793
F. Bezerra, D. Hardy, R. Velazco, H. Ziade
{"title":"TILMICRO, a new SEU and latch-up tester for microprocessors: initial results on 32-bit floating point DSPs","authors":"F. Bezerra, D. Hardy, R. Velazco, H. Ziade","doi":"10.1109/RADECS.1995.509793","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509793","url":null,"abstract":"As the need for 32 bit DSPs increases for on board equipment, we have built a new SEU and latch-up tester that is able to test processors such as these DSPs. The first results have been obtained on the 96002 from Motorola and the ADSP21020 from Analog Devices.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130908306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Radiation sources in the picosecond range 皮秒范围的辐射源
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509762
S. Joly, G. Haouat, J. di Crescenzo, S. Striby
{"title":"Radiation sources in the picosecond range","authors":"S. Joly, G. Haouat, J. di Crescenzo, S. Striby","doi":"10.1109/RADECS.1995.509762","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509762","url":null,"abstract":"The RF electron linear accelerator of the ELSA facility delivers 20 ps and 200 A electron bunches. The facility is being modified to provide also bremsstrahlung and X-ray radiations using different processes like transition and channeling radiations. The paper describes the accelerator and the modifications under way.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114410299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
ADC performance drift trade-off: a case study ADC性能漂移权衡:案例研究
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509795
P. Dautriche, J.P. Aubert, D. Vellou
{"title":"ADC performance drift trade-off: a case study","authors":"P. Dautriche, J.P. Aubert, D. Vellou","doi":"10.1109/RADECS.1995.509795","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509795","url":null,"abstract":"Characteristics of ADCs and performance drift under irradiation are often the critical points concerning the performance of equipment operating in hostile radiative environment. A presentation is given of the results obtained on 8 bit ADC manufactured in high speed bipolar technology (fT=8 GHz). A comparison between rad hard ADC and rad tolerant ADC is also presented in order to show the impact of technological choice on irradiation and electrical performances.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124147982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Development of facilities for investigating single-event effects 发展用于调查单事件效应的设备
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509758
I. Nashiyama, T. Hirao, H. Itoh, T. Kamiya, I. Naito, S. Matsuda
{"title":"Development of facilities for investigating single-event effects","authors":"I. Nashiyama, T. Hirao, H. Itoh, T. Kamiya, I. Naito, S. Matsuda","doi":"10.1109/RADECS.1995.509758","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509758","url":null,"abstract":"Energetic heavy-ion irradiation apparatus has been developed for single-event effects (SEE) testing. We have applied three irradiation methods, scattered-ion irradiation method, a recoiled-atom irradiation method, and a direct-beam irradiation method to perform SEE testing efficiently. For the study of basic mechanisms of single-event upset, we have developed a transient current measurement system by combining focused high-energy ion microbeams with a wide bandwidth digitizing sampling technique. The waveform of transient current induced by an energetic heavy-ion strike on a silicon test diode was measured with 1 /spl mu/m positioning accuracy. We succeeded in experimental separation of the delayed diffusion current from the prompt drift and funneling currents.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123624444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The use of pMOS dosimeters at megagray total doses 以兆兆总剂量使用pMOS剂量计
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509826
R. Sharp, S.L. Pater
{"title":"The use of pMOS dosimeters at megagray total doses","authors":"R. Sharp, S.L. Pater","doi":"10.1109/RADECS.1995.509826","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509826","url":null,"abstract":"The response of MOS dosimeters manufactured by REM and NMRC has been assessed at total doses of up to 1 MGy for use in nuclear power industry applications. This has shown that existing devices can be used for some tasks but further development and qualification is required for others.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129211965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
On radiation damage of scintillating organic fibres in dependence on energetic electron bombardment 基于高能电子轰击的闪烁有机纤维辐射损伤研究
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509832
H. Klose, M. Krause, W. Pfeiffer, J. Rauchfuss, G. Sinn, D. Fink, M. Wilhelm
{"title":"On radiation damage of scintillating organic fibres in dependence on energetic electron bombardment","authors":"H. Klose, M. Krause, W. Pfeiffer, J. Rauchfuss, G. Sinn, D. Fink, M. Wilhelm","doi":"10.1109/RADECS.1995.509832","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509832","url":null,"abstract":"New experimental results on in-situ observations of degradation of scintillating light yield and on time-compressed ageing and recovery studies of organic blue and green scintillating fibres generated by 16 MeV electron irradiation are reported. Only for low current densities the observed in-situ degradation has a nearly linear decrease. Typical self annealing effects can be characterized by a logarithmic law. Total recovery of optical properties for blue and green scintillators does not occur for energy doses above 10 Mrad and 20 Mrad, respectively.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129676916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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