Radiation induced degradation in power MOSFETs

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI:10.1109/RADECS.1995.509780

E. Bendada, M. de la Bardonnie, P. Mialhe, J. Charles, E. Blampain, A. Hoffmann

引用次数: 0

Abstract

An innovative method for device characterization is experimented to determine the radiation response of power MOSFETs. The degradation of body-drain junction parameters by ionizing radiation depends on the total energy to which the material has been subjected.

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功率mosfet的辐射诱导退化

实验了一种新颖的器件表征方法来确定功率mosfet的辐射响应。电离辐射对体漏结参数的退化取决于材料所受的总能量。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems

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