发布求助
文献互助 智能选刊 最新文献

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems最新文献

筛选
英文 中文
Radiation damage in amplifiers used for quench detection in a superconducting accelerator 超导加速器中用于猝灭检测放大器的辐射损伤
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509757
V. Remondino
{"title":"Radiation damage in amplifiers used for quench detection in a superconducting accelerator","authors":"V. Remondino","doi":"10.1109/RADECS.1995.509757","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509757","url":null,"abstract":"The behaviour of some isolation amplifiers irradiated at the CERN PSAIF facility is described. These components were irradiated to total integrated neutron fluences varying from 1.2/spl times/10/sup 13/ n/cm/sup 2/ (E>140 keV) to 1.34/spl times/10/sup 14/ n/cm/sup 2/ (E>140 keV). The degradation of the electrical characteristics was measured versus doses. These amplifiers could be used for the superconducting magnet protection of LHC. They will be placed inside the tunnel and they will be exposed to 2.5/spl times/10/sup 13/ n/cm/sup 2/ (E>140 keV) during 10 year operation life time.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130666671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Power MOSFETs hardened for single event effects (SEE) in space 功率mosfet在空间中加强了单事件效应(SEE)
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509786
D. Carley, C. Wheatley, J. Titus, D. I. Burton
{"title":"Power MOSFETs hardened for single event effects (SEE) in space","authors":"D. Carley, C. Wheatley, J. Titus, D. I. Burton","doi":"10.1109/RADECS.1995.509786","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509786","url":null,"abstract":"Measurements are presented for the single event effects and total dose responses of the newly introduced Harris \"FS\" series of space hardened power MOSFETs. The hardness appears to offer a breakthrough for commercial space requirements.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128646938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Upgrade of a hardened electronic system's design method 一种硬化电子系统设计方法的改进
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509778
Y.M. Coie, T. Garié
{"title":"Upgrade of a hardened electronic system's design method","authors":"Y.M. Coie, T. Garié","doi":"10.1109/RADECS.1995.509778","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509778","url":null,"abstract":"We have in charge the design of specific systems, to warrant their hardening level we needed to define a dedicated methodology. The phases of the method and a new tool to help the designer of hardened systems will be shown in this paper.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127867872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Robustness against S.E.U. of an artificial neural network space application 鲁棒性抗S.E.U.的一种人工神经网络空间应用
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509817
A. Assoum, M. E. Radi, Raoul Velazco, F. Elie, R. Ecoffet
{"title":"Robustness against S.E.U. of an artificial neural network space application","authors":"A. Assoum, M. E. Radi, Raoul Velazco, F. Elie, R. Ecoffet","doi":"10.1109/RADECS.1995.509817","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509817","url":null,"abstract":"We study the sensitivity of Artificial Neural Networks (ANN) to Single Event Upsets (SEU). A neural network designed to detect electronic and protonic whistlers has been implemented using a dedicated VLSI circuit: the LNeuro neural processor. Results of both SEU software simulations and heavy ion tests point out the fault tolerance properties of ANN hardware implementations.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"230 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134021833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
ADC performance drift trade-off: a case study ADC性能漂移权衡:案例研究
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509795
P. Dautriche, J.P. Aubert, D. Vellou
{"title":"ADC performance drift trade-off: a case study","authors":"P. Dautriche, J.P. Aubert, D. Vellou","doi":"10.1109/RADECS.1995.509795","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509795","url":null,"abstract":"Characteristics of ADCs and performance drift under irradiation are often the critical points concerning the performance of equipment operating in hostile radiative environment. A presentation is given of the results obtained on 8 bit ADC manufactured in high speed bipolar technology (fT=8 GHz). A comparison between rad hard ADC and rad tolerant ADC is also presented in order to show the impact of technological choice on irradiation and electrical performances.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124147982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Recent advances in understanding total-dose effects in bipolar transistors 双极晶体管总剂量效应的最新研究进展
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509744
peixiong zhao
{"title":"Recent advances in understanding total-dose effects in bipolar transistors","authors":"peixiong zhao","doi":"10.1109/RADECS.1995.509744","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509744","url":null,"abstract":"Gain degradation in irradiated bipolar transistors can be a significant problem, particularly in linear integrated circuits. In many bipolar technologies, the degradation is greater for irradiation at low dose rates than it is for typical laboratory dose rates. Ionizing radiation causes the base current in bipolar transistors to increase, due to the presence of net positive charge in the oxides covering sensitive device areas and increases in surface recombination velocity. Understanding the mechanisms responsible for radiation-induced gain degradation in bipolar transistors is important in developing appropriate hardness assurance methods. This paper reviews recent modeling and experimental work, with the emphasis on low-dose-rate effects. A promising hardness assurance method based on irradiation at elevated temperatures is described.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114161353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 81
Radiation sources in the picosecond range 皮秒范围的辐射源
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509762
S. Joly, G. Haouat, J. di Crescenzo, S. Striby
{"title":"Radiation sources in the picosecond range","authors":"S. Joly, G. Haouat, J. di Crescenzo, S. Striby","doi":"10.1109/RADECS.1995.509762","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509762","url":null,"abstract":"The RF electron linear accelerator of the ELSA facility delivers 20 ps and 200 A electron bunches. The facility is being modified to provide also bremsstrahlung and X-ray radiations using different processes like transition and channeling radiations. The paper describes the accelerator and the modifications under way.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114410299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Total dose responses of Actel 1020B and 1280A field programmable gate arrays (FPGAs) Actel 1020B和1280A现场可编程门阵列(fpga)的总剂量响应
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509812
R. Katz, G. Swift, D. Shaw
{"title":"Total dose responses of Actel 1020B and 1280A field programmable gate arrays (FPGAs)","authors":"R. Katz, G. Swift, D. Shaw","doi":"10.1109/RADECS.1995.509812","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509812","url":null,"abstract":"Gamma irradiation and annealing of a large number of Actel FPGAs with in-situ current measurements were performed. Lot-to-lot, part-to-part, and burn in variations were measured. Findings include a catastrophic failure mechanism and minimal dose rate effects.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116713614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Serendipitous SEU hardening of resistive load SRAMs 电阻负载sram的偶然性SEU硬化
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509802
R. Koga, J. Kirshman, S. D. Pinkerton, S. Hansel, K. Crawford, W. Crain
{"title":"Serendipitous SEU hardening of resistive load SRAMs","authors":"R. Koga, J. Kirshman, S. D. Pinkerton, S. Hansel, K. Crawford, W. Crain","doi":"10.1109/RADECS.1995.509802","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509802","url":null,"abstract":"High and low resistive load versions of Micron Technology's MT5C1008C(128 K/spl times/8) and MT5C2561C(256 K/spl times/1) SRAMs were tested for SEU vulnerability. Contrary to computer simulation results, SEU susceptibility decreased with increasing resistive load A substantially larger number of multiple-bit errors were observed for the low resistive load SRAMs, which also exhibited a \"1\"/spl rarr/\"0\" to \"0\"/spl rarr/\"1\" bit error ratio close to unity; in contrast, the high resistive load devices displayed a pronounced error bit polarity effect. Two distinct upset mechanisms are proposed to account for these observations.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115082599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Radiation induced degradation in power MOSFETs 功率mosfet的辐射诱导退化
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509780
E. Bendada, M. de la Bardonnie, P. Mialhe, J. Charles, E. Blampain, A. Hoffmann
{"title":"Radiation induced degradation in power MOSFETs","authors":"E. Bendada, M. de la Bardonnie, P. Mialhe, J. Charles, E. Blampain, A. Hoffmann","doi":"10.1109/RADECS.1995.509780","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509780","url":null,"abstract":"An innovative method for device characterization is experimented to determine the radiation response of power MOSFETs. The degradation of body-drain junction parameters by ionizing radiation depends on the total energy to which the material has been subjected.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116422743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信
小红书