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Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems最新文献

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Interpretation of heavy ion cross section measurements 重离子截面测量的解释
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509804
E. Petersen
{"title":"Interpretation of heavy ion cross section measurements","authors":"E. Petersen","doi":"10.1109/RADECS.1995.509804","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509804","url":null,"abstract":"This paper discusses the information about a device that is contained in the experimental heavy ion cross section curve. The width and shape of the curve are shown to be determined by intra-cell variations of charge collection, not by cell to cell variations. If we assume that there is a unique charge that must appear on the transistor terminal, then the cross section may be described in terms of variation of effective charge collection depth across the device. Contours of constant charge collection can be determined from the parameters that describe the cross section curve. The effects of diffusion can be distinguished from the other charge collection processes.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124585054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
Numerical modelling of mechanisms involved in latchup triggering by a laser beam 激光锁闭触发机理的数值模拟
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509806
P. Fouillat, H. Lapuyade, A. Touboul, J. Dom, R. Gaillard
{"title":"Numerical modelling of mechanisms involved in latchup triggering by a laser beam","authors":"P. Fouillat, H. Lapuyade, A. Touboul, J. Dom, R. Gaillard","doi":"10.1109/RADECS.1995.509806","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509806","url":null,"abstract":"The use of a laser beam is a well-known technique to trigger latchup parasitic structures in ICs. Numerical analyses of this phenomenon are brought into play to study its sensitivity when a continuous wave laser as well as pulsed lasers are used. The impact location is also studied to demonstrate that different mechanisms are involved in the triggering phase of latchup. The structure is also more sensitive to the blue light when it is directed over the well-substrate junction while it is more sensitive to infrared light elsewhere. When using a CW laser, the curves giving the power supply current versus the photo-induced current provide direct information on the parameters of the parasitic structure.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127674603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Upgrade of a hardened electronic system's design method 一种硬化电子系统设计方法的改进
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509778
Y.M. Coie, T. Garié
{"title":"Upgrade of a hardened electronic system's design method","authors":"Y.M. Coie, T. Garié","doi":"10.1109/RADECS.1995.509778","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509778","url":null,"abstract":"We have in charge the design of specific systems, to warrant their hardening level we needed to define a dedicated methodology. The phases of the method and a new tool to help the designer of hardened systems will be shown in this paper.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127867872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Robustness against S.E.U. of an artificial neural network space application 鲁棒性抗S.E.U.的一种人工神经网络空间应用
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509817
A. Assoum, M. E. Radi, Raoul Velazco, F. Elie, R. Ecoffet
{"title":"Robustness against S.E.U. of an artificial neural network space application","authors":"A. Assoum, M. E. Radi, Raoul Velazco, F. Elie, R. Ecoffet","doi":"10.1109/RADECS.1995.509817","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509817","url":null,"abstract":"We study the sensitivity of Artificial Neural Networks (ANN) to Single Event Upsets (SEU). A neural network designed to detect electronic and protonic whistlers has been implemented using a dedicated VLSI circuit: the LNeuro neural processor. Results of both SEU software simulations and heavy ion tests point out the fault tolerance properties of ANN hardware implementations.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"230 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134021833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Model of single event upsets induced by space protons in electronic devices 电子设备中空间质子引起的单事件扰动模型
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509810
B. Doucin, T. Carrière, C. Poivey, P. Garnier, J. Beaucour, Y. Patin
{"title":"Model of single event upsets induced by space protons in electronic devices","authors":"B. Doucin, T. Carrière, C. Poivey, P. Garnier, J. Beaucour, Y. Patin","doi":"10.1109/RADECS.1995.509810","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509810","url":null,"abstract":"An evaluation of energy deposition induced by p-Si nuclear reactions as a function of circuit sensitive thickness and proton incident energy is performed to develop a model which predicts proton-induced SEU cross-sections from heavy ion experiment. A set of experimental validation is presented showing the convenient accuracy of the model.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123827454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 39
Proton SEU test of MC68020, MC68882, TMS320C25 on the ARIANE 5 launcher on board computer (OBC) and inertial reference system (SRI) MC68020、MC68882、TMS320C25在阿丽亚娜5号运载火箭机载计算机(OBC)和惯性参考系统(SRI)上的质子单单元测试
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509792
C. Poivey, O. Notebaert, P. Garnier, T. Carrière, J. Beaucour, B. Steiger, J. M. Salle, F. Bezerra, R. Ecoffet, B. Cadot, M. Calvet, P. Simon
{"title":"Proton SEU test of MC68020, MC68882, TMS320C25 on the ARIANE 5 launcher on board computer (OBC) and inertial reference system (SRI)","authors":"C. Poivey, O. Notebaert, P. Garnier, T. Carrière, J. Beaucour, B. Steiger, J. M. Salle, F. Bezerra, R. Ecoffet, B. Cadot, M. Calvet, P. Simon","doi":"10.1109/RADECS.1995.509792","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509792","url":null,"abstract":"The ARIANE 5 on board computer (OBC) and Inertial Reference System (SRI) are based on Motorola MC68020 processor and MC68882 coprocessor. The SRI data acquisition board also uses the DSP TMS320C25 from Texas Instruments. These devices were characterized for proton induced SEUs. But representativeness of SEU test results on processors was questioned during ARIANE 5 studies. Protons test of these devices were also performed in the actual equipment with flight (or representative of) software. The results show that the OBC and the inertial reference system can satisfy the requirements of the ARIANE 5 missions.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125820298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Fast techniques for MOSFET response prediction in space environments 空间环境中MOSFET响应预测的快速技术
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509776
V. Pershenkov, V. Belyakov, M. Popov, S. Cherepko, I. N. Shvetzov-Shilovsky
{"title":"Fast techniques for MOSFET response prediction in space environments","authors":"V. Pershenkov, V. Belyakov, M. Popov, S. Cherepko, I. N. Shvetzov-Shilovsky","doi":"10.1109/RADECS.1995.509776","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509776","url":null,"abstract":"The theoretical and practical aspects of two techniques for low dose rate effects investigations in MOS circuits are discussed. The first technique is based on the use of linear response theory together with the conversion model of interface states formation. The cornerstone of the second technique is the radiation induced charge neutralization phenomenon under negative oxide electric field. The application of test techniques for circuit simulation and the extraction of SPICE model parameters is also discussed.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"26 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126131736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SEE data from the APEX Cosmic Ray Upset Experiment: predicting the performance of commercial devices in space 来自APEX宇宙射线扰动实验的SEE数据:预测商业设备在太空中的性能
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509839
J. Adolphsen, J. Barth, E. Stassinopoulos, T. Gruner, M. Wennersten, K. Label, C. Seidleck
{"title":"SEE data from the APEX Cosmic Ray Upset Experiment: predicting the performance of commercial devices in space","authors":"J. Adolphsen, J. Barth, E. Stassinopoulos, T. Gruner, M. Wennersten, K. Label, C. Seidleck","doi":"10.1109/RADECS.1995.509839","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509839","url":null,"abstract":"This paper presents additional results from the CRUX experiment on the US Air Force APEX satellite. The experiment monitors single event effects on 256 Kbit and 1 Mbit SRAMs. It is shown that trapped protons dominate the single event upset rates, as evidenced by correlation with measured proton flux peaks and with flux contours calculated with the AP8 model. The responses of some part type lots were surprising because of the wide variation exhibited in upset rates from device to device within a part type, and because of a wide disparity in upset rates, depending on logic state. The use of generic ground test data in error rate predictions for a mission may be acceptable, but may also result in answers whose inaccuracies are unknown and could be unacceptably large.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126955550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Total dose responses of Actel 1020B and 1280A field programmable gate arrays (FPGAs) Actel 1020B和1280A现场可编程门阵列(fpga)的总剂量响应
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509812
R. Katz, G. Swift, D. Shaw
{"title":"Total dose responses of Actel 1020B and 1280A field programmable gate arrays (FPGAs)","authors":"R. Katz, G. Swift, D. Shaw","doi":"10.1109/RADECS.1995.509812","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509812","url":null,"abstract":"Gamma irradiation and annealing of a large number of Actel FPGAs with in-situ current measurements were performed. Lot-to-lot, part-to-part, and burn in variations were measured. Findings include a catastrophic failure mechanism and minimal dose rate effects.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116713614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Charge-collection characteristics of GaAs heterostructure FETs fabricated with a low-temperature grown GaAs buffer layer 低温生长GaAs缓冲层制备GaAs异质结构场效应管的电荷收集特性
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509805
D. McMorrow, T. Weatherford, A. Knudson, S. Buchner, J. Melinger, L. Tran, A. Campbell, P. Marshall, C. Dale, A. Peczalski, S. Baiers
{"title":"Charge-collection characteristics of GaAs heterostructure FETs fabricated with a low-temperature grown GaAs buffer layer","authors":"D. McMorrow, T. Weatherford, A. Knudson, S. Buchner, J. Melinger, L. Tran, A. Campbell, P. Marshall, C. Dale, A. Peczalski, S. Baiers","doi":"10.1109/RADECS.1995.509805","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509805","url":null,"abstract":"The charge-collection characteristics of GaAs heterojunction-insulated-gate FETs fabricated with a low-temperature grown GaAs (LT GaAs) buffer layer are investigated as a function of device bias conditions for laser and ion irradiation. In accordance with earlier measurements, the LT GaAs FETs of this study exhibit a significant reduction in charge-collection efficiencies when compared to those of conventional FETs. This reduction in collected charge is associated with the efficient reduction of charge-enhancement mechanisms in the LT GaAs devices. It is revealed that charge-enhancement processes do occur in the LT devices under certain bias conditions, although at significantly reduced levels when compared to conventional FETs.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115632740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
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