Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems最新文献_第7页

Radiation hardening of optical fibre links by photobleaching with light of shorter wavelength 用短波长的光漂白法对光纤链路进行辐射硬化

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509830

H. Henschel, O. Kohn, H. U. Schmidt

引用次数: 29

Total dose response of a U.H.F. complementary-bipolar process (C-bip) using dielectric isolation (DI/SOI) 使用介质隔离(DI/SOI)的超高频互补双极过程(C-bip)的总剂量响应

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509790

M. Melotte

引用次数: 4

Barrier width of an irradiated junction 辐照结的势垒宽度

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509748

Y. Moreau, F. Pelanchon, C. Sudre

引用次数: 0

Comparative study of the radiation hardness of an analog CMOS pipeline, discrete MOS transistors and interface traps in MOS capacitors 模拟CMOS管道、分立MOS晶体管和MOS电容中接口阱辐射硬度的比较研究

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509750

S. Bottcher, C. Coldewey, N. Croitoru, A. Seidman, H. Vogt

{"title":"Comparative study of the radiation hardness of an analog CMOS pipeline, discrete MOS transistors and interface traps in MOS capacitors","authors":"S. Bottcher, C. Coldewey, N. Croitoru, A. Seidman, H. Vogt","doi":"10.1109/RADECS.1995.509750","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509750","url":null,"abstract":"The ZEUS experiment at HERA employs a custom made analog pipeline, manufactured with a 2 /spl mu/m CMOS process. The standard transistor layout was not sufficiently radiation hard. After introducing thin oxide extension and guard bands, the pipeline worked after irradiation, up to 500 krad, with only minor performance degradation. The performance of the pipeline and of discrete transistors was studied before and after irradiation. Additionally, interface traps were investigated on MOS capacitors. All devices were made with the same process. The degradation of transistor parameters was related to changes in the parameters of the pipeline. Most effects in the circuit could be explained by the observed threshold voltage shift in the transistors. Interface trap densities were measured on MOS capacitors in the lower part of the silicon bandgap, obtained under different bias conditions during irradiation. The observed interface trap density is low. The threshold voltage shift is dominated by fixed oxide charges.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131580352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

A simple model for calculating proton induced SEU 一个计算质子诱导SEU的简单模型

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509815

J. Barak, J. Levinson, A. Akkerman, Y. Lifshitz, M. Victoria

引用次数: 30

A study involving the design and the fabrication process on the SRAM behaviour during a dose-rate event 涉及在剂量率事件中SRAM行为的设计和制造过程的研究

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509819

R. Marec, P. Mary, R. Gaillard, J. Palau, G. Bruguier, J. Gasiot

引用次数: 1

Power MOSFETs hardened for single event effects (SEE) in space 功率mosfet在空间中加强了单事件效应(SEE)

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509786

D. Carley, C. Wheatley, J. Titus, D. I. Burton

引用次数: 11

Analog performance of SOI MOSFETs up to 25 mrad (Si) 高达25 mrad (Si)的SOI mosfet模拟性能

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509766

F. Faccio, P. Aspell, E. Heijne, P. Jarron, G. Borel

引用次数: 3

Gamma-ray irradiation induced degradation in ultra-thin silica layers 伽玛射线辐照诱导超薄二氧化硅层降解

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509755

A. Aassime, G. Sarrabayrouse, G. Salace, C. Petit

引用次数: 1

Radiation damage in amplifiers used for quench detection in a superconducting accelerator 超导加速器中用于猝灭检测放大器的辐射损伤

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509757

V. Remondino

引用次数: 5