使用介质隔离(DI/SOI)的超高频互补双极过程(C-bip)的总剂量响应

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI:10.1109/RADECS.1995.509790

M. Melotte

{"title":"使用介质隔离(DI/SOI)的超高频互补双极过程(C-bip)的总剂量响应","authors":"M. Melotte","doi":"10.1109/RADECS.1995.509790","DOIUrl":null,"url":null,"abstract":"Fast analog signal processing in ionizing radiation environments is today a growing activity for our ASIC design company. To answer this need, we have tested the total-dose response, up to 30 kGy(Si) (3 Mrad(Si)), of the NPN and PNP transistors used in the DI-Cbip UHF process from Harris Semiconductor. Results show a common-emitter current gain (/spl beta/) degradation of approximately 50% at usual current density. Degradation versus total dose exhibits saturation above 20 kGy(Si) at 36 mGy(Si)/s (3.6 rad(Si)/s).","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Total dose response of a U.H.F. complementary-bipolar process (C-bip) using dielectric isolation (DI/SOI)\",\"authors\":\"M. Melotte\",\"doi\":\"10.1109/RADECS.1995.509790\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Fast analog signal processing in ionizing radiation environments is today a growing activity for our ASIC design company. To answer this need, we have tested the total-dose response, up to 30 kGy(Si) (3 Mrad(Si)), of the NPN and PNP transistors used in the DI-Cbip UHF process from Harris Semiconductor. Results show a common-emitter current gain (/spl beta/) degradation of approximately 50% at usual current density. Degradation versus total dose exhibits saturation above 20 kGy(Si) at 36 mGy(Si)/s (3.6 rad(Si)/s).\",\"PeriodicalId\":310087,\"journal\":{\"name\":\"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-09-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RADECS.1995.509790\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADECS.1995.509790","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

在电离辐射环境下的快速模拟信号处理是我们ASIC设计公司今天日益增长的活动。为了满足这一需求，我们测试了哈里斯半导体在di - chip UHF工艺中使用的NPN和PNP晶体管的总剂量响应，高达30 kGy(Si) (3 Mrad(Si))。结果表明，在通常的电流密度下，共发射极电流增益(/spl β /)下降了约50%。降解相对于总剂量在36 mGy(Si)/s (3.6 rad(Si)/s)时达到20 kGy(Si)以上的饱和。

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Total dose response of a U.H.F. complementary-bipolar process (C-bip) using dielectric isolation (DI/SOI)

Fast analog signal processing in ionizing radiation environments is today a growing activity for our ASIC design company. To answer this need, we have tested the total-dose response, up to 30 kGy(Si) (3 Mrad(Si)), of the NPN and PNP transistors used in the DI-Cbip UHF process from Harris Semiconductor. Results show a common-emitter current gain (/spl beta/) degradation of approximately 50% at usual current density. Degradation versus total dose exhibits saturation above 20 kGy(Si) at 36 mGy(Si)/s (3.6 rad(Si)/s).

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Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems

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