A study involving the design and the fabrication process on the SRAM behaviour during a dose-rate event

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI:10.1109/RADECS.1995.509819

R. Marec, P. Mary, R. Gaillard, J. Palau, G. Bruguier, J. Gasiot

引用次数: 1

Abstract

The experimental results analysis of TS4T1601 SRAMs in standby mode and electrical simulations show that the SRAM design and some slight mask misalignments during the fabrication process are dominant factors concerning the dose-rate upset patterns and thresholds.

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涉及在剂量率事件中SRAM行为的设计和制造过程的研究

待机状态下TS4T1601 SRAM的实验结果分析和电学仿真表明，SRAM的设计和制造过程中一些轻微的掩模错位是影响剂量率扰动模式和阈值的主要因素。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems

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