Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems最新文献_第6页

Proton irradiation of various resistivity silicon detectors 各种电阻率硅探测器的质子辐照

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509825

S. Bates, B. Dezillie, C. Furetta, M. Glaser, F. Lemeilleur, E. León-Florián

{"title":"Proton irradiation of various resistivity silicon detectors","authors":"S. Bates, B. Dezillie, C. Furetta, M. Glaser, F. Lemeilleur, E. León-Florián","doi":"10.1109/RADECS.1995.509825","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509825","url":null,"abstract":"Future high energy physics experiments at CERN's Large Hadron Collider will use high precision silicon detectors for tracking purposes. The hadronic component of the radiation received threatens the lifetime of these detectors and it is vital to choose the silicon starting material to maximise the performance and lifetime. Ion-implanted silicon detectors with various initial resistivities and germanium concentrations have been irradiated with high energy protons up to a fluence of 10/sup 14/ cm/sup -2/. The change in leakage current and full depletion voltage have been studied both as a function of fluence and of time after irradiation. Measurements were made up to 100 days post-irradiation at room temperature and then using heating techniques to accelerate processes up to the equivalent of over 10 years at room temperature. The leakage-current damage constant is shown to be independent of the starting material while the conduction type inversion point and the long-term annealing of the depletion voltage are sensitive to the initial resistivity and impurity concentrations.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130946701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 21

Modelling CMOS radiation tolerance in the high-dose range 高剂量范围内CMOS辐射耐受性建模

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509775

A. Holmes-Siedle, P. Christensen, L. Adams, C.-C. Seifert

引用次数: 2

Analysis of local and global transient effects in a CMOS SRAM CMOS SRAM的局部和全局瞬态效应分析

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509801

F. Gardic, O. Musseau, O. Flament, C. Brisset, V. Ferlet-Cavrois, M. Martinez, T. Corbiere

引用次数: 13

Radiation hardening of pure-silica-core optical fibers by ultra-high-dose /spl gamma/-ray pre-irradiation 超高剂量/spl γ /射线预辐照纯硅芯光纤的辐射硬化

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509827

D. Griscom

引用次数: 6

Super-high-strength metal-coated low-hydroxyl low-chlorine all-silica optical fibers 超高强度金属包覆低羟基低氯全硅光纤

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509828

V. Bogatyrjov, I. I. Cheremisin, E. Dianov, K. Golant, A. L. Tomashuk

{"title":"Super-high-strength metal-coated low-hydroxyl low-chlorine all-silica optical fibers","authors":"V. Bogatyrjov, I. I. Cheremisin, E. Dianov, K. Golant, A. L. Tomashuk","doi":"10.1109/RADECS.1995.509828","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509828","url":null,"abstract":"High-purity KS-4V synthetic silica developed in the Silicate Chemistry Institute of the Russian Academy of Sciences is tested as the core material for radiation hardened optical fibers. Pure-silica-core fluorine-doped-silica-cladding optical fibers with polymer (acrylate) or metal (aluminum) coating are produced as the experimental samples. The light-reflecting fluorine-doped silica cladding is synthesized by the plasma outside deposition process. The aluminum coating technology used provides a very high strength of the fibers, unattainable for polymer coatings, and expands the fiber operating range up to 400/spl deg/C. It is established that the metal coating application can result in the annealing of the drawing-induced color centers with an absorption peak at 630 nm. Post-/spl gamma/-irradiation loss spectra in KS-4V-based fibers measured in 1-2 hours after 2 MGy irradiation at a dose rate of 8.3 Gy/s in the spectral range 350-700 nm are discussed. The 630 nm absorption peak is practically absent from the post-irradiation loss spectra of aluminum-coated KS-4V-based fibers.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123644925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 28

Assessment of a new p-MOSFET usable as a doserate insensitive gamma dose sensor 可作为剂量不敏感γ剂量传感器的新型p-MOSFET的评估

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509822

F. Vettese, C. Donichak, P. Bourgeault, G. Sarrabayrouse

引用次数: 28

/spl gamma/-ray-induced optical attenuation in Ge-doped-silica fiber image guides 锗掺杂二氧化硅光纤成像波导中伽马/射线诱导的光衰减

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509813

D. Griscom

引用次数: 7

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509831

R. H. West, S. Dowling

引用次数: 1

Formatting and numerical processing of irradiation tests results 辐照试验结果的格式和数值处理

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509789

B. Azais, J.P. Vannel

{"title":"Formatting and numerical processing of irradiation tests results","authors":"B. Azais, J.P. Vannel","doi":"10.1109/RADECS.1995.509789","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509789","url":null,"abstract":"Within the context of the implementation of a new data-base of electronic component vulnerability to radiation, complementary tools making data collecting and processing easier are presented. Reliability of data included in the base is achieved with: a standardization of total dose, neutron fluence and dose rate, test procedures; a standardization of test report presentation; a verification and a digital processing of experimental results before their transfer in the base. The pertinence of information obtained by this means enables an empirical and statistical analysis of the behaviour of the various component families, serving to define design rules of systems that have to resist a tactical nuclear aggression. This approach is illustrated with examples concerning the cumulative damage measured on 151 operational amplifiers in neutron fluence and on 70 MOS transistors in total dose, as well as the threshold effect existing in CMOS/bulk integrated circuits in dose rate on 226 components. Thanks to this analysis, the accumulation of test data should enable us to extract, by family, the characteristics representative of radiation effects, as well as their distribution law.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"171 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124164670","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Reversible positive charge annealing in MOS transistor during variety of electrical and thermal stresses MOS晶体管在各种电应力和热应力下的可逆正电荷退火

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509752

V. Emelianov, G. Zebrev, V. N. Ulimov, R. G. Useinov, V. Belyakov, V. Pershenkov

引用次数: 15