可作为剂量不敏感γ剂量传感器的新型p-MOSFET的评估

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI:10.1109/RADECS.1995.509822

F. Vettese, C. Donichak, P. Bourgeault, G. Sarrabayrouse

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引用次数: 28

摘要

DGA/CEB对LAAS-CNRS设计和制造的单个无偏MOSFET伽马辐射传感器的剂量学响应进行了评估。该晶体管将用作军事人员剂量计的传感器，以记录以高于20 Gy/h的剂量发射的伽马剂量。

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Assessment of a new p-MOSFET usable as a doserate insensitive gamma dose sensor

The DGA/CEB has made an assessment of the dosimetric response of a single unbiased MOSFET gamma-radiation sensor, designed and created by LAAS-CNRS. This transistor is to be the sensor of a military personnel dosimeter to record gamma doses emitted at a doserate higher than 20 Gy/h.

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Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems

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