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Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems最新文献

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Shallow and deep donors induced by light ions in N-type silicon n型硅中光离子诱导的浅层和深层给体
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509756
E. Ntsoenzok, P. Desgardin, J. Barbot, J. Vernois, D. Isabelle
{"title":"Shallow and deep donors induced by light ions in N-type silicon","authors":"E. Ntsoenzok, P. Desgardin, J. Barbot, J. Vernois, D. Isabelle","doi":"10.1109/RADECS.1995.509756","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509756","url":null,"abstract":"We have studied the evolution of the doping profile in power device components after irradiation by protons and alpha particles. Both annealed and unannealed samples were measured by C-V measurements carried out as functions of the sample temperature and of the Fermi level position. For samples irradiated by protons, the deep donors were present before annealing while the shallow donors appear after annealing. For the samples irradiated with alpha particles the deep donors were present in unannealed samples while no donor (whether shallow or deep) was measured after annealing at 400/spl deg/C.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129510354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Stacked RADFETs for increased radiation sensitivity 堆叠radfet，增加辐射灵敏度
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509824
B. O'Connell, A. Kelleher, W. Lane, L. Adams
{"title":"Stacked RADFETs for increased radiation sensitivity","authors":"B. O'Connell, A. Kelleher, W. Lane, L. Adams","doi":"10.1109/RADECS.1995.509824","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509824","url":null,"abstract":"Hitherto, pMOS Radiation Sensitive Field Effect Transistors (RADFETs) have not been able to detect doses in the milli-rad range, which are required for low dose clinical/personnel applications. This paper reports on further investigation of a design approach, where RADFETs are connected in a stacked sequence so that increased radiation sensitivity is obtained. The radiation sensitivity obtained for 40 stacked RADFETs is approximately 220 times the single RADFET sensitivity. This enables radiation sensitivities in the milli-rad range to be measured. Theoretical equations governing the threshold voltage of a MOS device as a function of bulk-source voltage are used to theoretically evaluate the output voltage of the stacked structure. Measurement and theory are found to agree closely in this analysis. % drift and % fading of the single RADFET, as a function of total radiation induced shift in V/sub T/, is similar to that of the stacked structure.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129954668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 27
Fast and slow border traps in MOS devices MOS器件中的快速和慢速边界陷阱
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509743
D. Fleetwood
{"title":"Fast and slow border traps in MOS devices","authors":"D. Fleetwood","doi":"10.1109/RADECS.1995.509743","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509743","url":null,"abstract":"Convergent lines of evidence are reviewed which show that near-interfacial oxide traps (border traps) that exchange charge with the Si can strongly affect the performance, radiation response, and long-term reliability of MOS devices. Observable effects of border traps include capacitance-voltage (C-V) hysteresis, enhanced 1/f noise, compensation of trapped holes, and increased thermally stimulated current in MOS capacitors. Effects of faster (switching times between /spl sim/10/sup -6/ s and /spl sim/1 s) and slower (switching times greater than /spl sim/1 s) border traps have been resolved via a dual-transistor technique. In conjunction with studies of MOS electrical response, electron paramagnetic resonance and spin dependent recombination studies suggest that E' defects (trivalent Si centers in SiO/sub 2/ associated with O vacancies) can function as border traps in MOS devices exposed to ionizing radiation or high-field stress. Hydrogen-related centers may also be border traps.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133924748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 143
Total dose effects on a fully-depleted SOI NMOSFET and its lateral parasitic transistor 全耗尽SOI NMOSFET及其横向寄生晶体管的总剂量效应
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509767
V. Ferlet-Cavrois, O. Musseau, D.L. Leray, M. Raffaelli, J. Pelloie, C. Raynaud
{"title":"Total dose effects on a fully-depleted SOI NMOSFET and its lateral parasitic transistor","authors":"V. Ferlet-Cavrois, O. Musseau, D.L. Leray, M. Raffaelli, J. Pelloie, C. Raynaud","doi":"10.1109/RADECS.1995.509767","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509767","url":null,"abstract":"The total dose-induced threshold voltage shift of fully-depleted NMOS transistors is strongly correlated with charge trapping in the buried oxide. Thinner buried oxide, though less dose sensitive than thicker, does not necessarily improve the radiation hardness of fully-depleted transistors because of the higher coupling effect. The lateral parasitic transistor characteristics are more sensitive to buried oxide trapping than those of the main active transistor. The back surface conduction in the thin part of the mesa edge increases with ionizing dose and adds to the front surface conduction.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134170840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 38
Total dose effects on elementary transistors of a comparator in bipolar technology 双极技术中比较器基本晶体管的总剂量效应
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509781
J. Bosc, G. Sarrabayrouse, F.X. Guerre
{"title":"Total dose effects on elementary transistors of a comparator in bipolar technology","authors":"J. Bosc, G. Sarrabayrouse, F.X. Guerre","doi":"10.1109/RADECS.1995.509781","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509781","url":null,"abstract":"In the present work we investigate elementary transistors behaviour of an Integrated Circuit using junction isolation bipolar technology. Polarization conditions and dose rate effects on the main elementary transistor types are analysed. Furthermore, the IC electronic function degradations are studied. Finally, a comparison between the IC's degradations and the elementary components ones is attempted.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"155 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134343638","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
System level radiation response of a high performance fiber optic data bus 高性能光纤数据总线的系统级辐射响应
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509833
C. Dale, P. Marshall, M.E. Fritz, M. de la Chapelle, M. Carts, K. Label
{"title":"System level radiation response of a high performance fiber optic data bus","authors":"C. Dale, P. Marshall, M.E. Fritz, M. de la Chapelle, M. Carts, K. Label","doi":"10.1109/RADECS.1995.509833","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509833","url":null,"abstract":"We present experimental determinations of the total ionizing dose response and the proton-induced Single Event Upset (SEU) sensitivity of components comprising a 200 Mbps star coupled fiber optic data bus. These results are compared with the in-situ response of the operating system under proton bombardment, resulting in excellent correlation of the system error rate with proton-induced bit errors in the receiver photodiode. Modeling and error rate predictions for orbital performance indicate robust tolerance to even harsh natural space environments.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"63 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113984046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Acknowledgement of the natural radiation environment upon the ARIANE 5 launcher 阿丽亚娜5号运载火箭上的自然辐射环境
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509773
M. Calvet, R. Mazón, P. Simon, D. Galindo, C. Poivey, P. Garnier, J. Bourrieau, B. Cadot, R. Ecoffet
{"title":"Acknowledgement of the natural radiation environment upon the ARIANE 5 launcher","authors":"M. Calvet, R. Mazón, P. Simon, D. Galindo, C. Poivey, P. Garnier, J. Bourrieau, B. Cadot, R. Ecoffet","doi":"10.1109/RADECS.1995.509773","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509773","url":null,"abstract":"Until now, the effects of the space environment on the electronics of European launchers had never been taken into account. The situation has changed entirely with the ARIANE 5 launcher, whose trajectory may go up to 3000 km. This presentation explains the procedure we used to guarantee that the launcher works faultlessly in the space environment.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114850704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Upsets in the Freja Magnetic Field Experiment 弗雷亚磁场实验的混乱
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509841
J. Kinnison
{"title":"Upsets in the Freja Magnetic Field Experiment","authors":"J. Kinnison","doi":"10.1109/RADECS.1995.509841","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509841","url":null,"abstract":"Several methods exist for estimating single event and proton upset rates based on ground test data. The accuracy of these methods is crucial to successfully designing spacecraft systems. This paper presents flight upset data from static RAMS used in the Freja Magnetic Field Experiment and compares the flight data to estimates generated by commonly used methods. The flight data is also used to test common assumptions about the variability of the orbital environment.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116301156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Radiation effects in resonance-tunnel diode structures 共振隧道二极管结构中的辐射效应
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509836
D. V. Gromov, V. Elesin, P.P. Maltcev, A. Nikiforov, V. A. Polunin
{"title":"Radiation effects in resonance-tunnel diode structures","authors":"D. V. Gromov, V. Elesin, P.P. Maltcev, A. Nikiforov, V. A. Polunin","doi":"10.1109/RADECS.1995.509836","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509836","url":null,"abstract":"Transient and structural damage effects in resonance-tunnel diode (RTD) structures are investigated under /sup 60/Co and pulsed laser influences. It was found that RTD semiconductor structural damage and dose-rate effects change the electron transport conditions and result in RTD current-voltage characteristic degradation.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130316781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Gamma radiation effects on bipolar transistors a comparison of surface mount and standard packages 双极电晶体表面贴装与标准封装之辐射效应比较
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509772
S.L. Pater, R. Sharp
{"title":"Gamma radiation effects on bipolar transistors a comparison of surface mount and standard packages","authors":"S.L. Pater, R. Sharp","doi":"10.1109/RADECS.1995.509772","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509772","url":null,"abstract":"Gamma radiation total dose effects on unbiased bipolar transistors in both surface mount and standard packages have been assessed. Total doses of up to 1 MGy have been covered at a dose rate of 12.6 kGy[H/sub 2/O]/hr, using a cobalt-60 source. No significant differences in the radiation effects between the two package styles were observed.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124356247","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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