Gamma radiation effects on bipolar transistors a comparison of surface mount and standard packages

Abstract

Gamma radiation total dose effects on unbiased bipolar transistors in both surface mount and standard packages have been assessed. Total doses of up to 1 MGy have been covered at a dose rate of 12.6 kGy[H/sub 2/O]/hr, using a cobalt-60 source. No significant differences in the radiation effects between the two package styles were observed.