Shallow and deep donors induced by light ions in N-type silicon

Abstract

We have studied the evolution of the doping profile in power device components after irradiation by protons and alpha particles. Both annealed and unannealed samples were measured by C-V measurements carried out as functions of the sample temperature and of the Fermi level position. For samples irradiated by protons, the deep donors were present before annealing while the shallow donors appear after annealing. For the samples irradiated with alpha particles the deep donors were present in unannealed samples while no donor (whether shallow or deep) was measured after annealing at 400/spl deg/C.