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Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems最新文献

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Experimental evidence of the temperature and angular dependence in SEGR [power MOSFETs] SEGR[功率mosfet]中温度和角度依赖性的实验证据
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509796
I. Mouret, M. Calvet, P. Calvel, P. Tastet, M. Allenspach, K. Label, J. Titus, C. Wheatley, peixiong zhao, K. Galloway
{"title":"Experimental evidence of the temperature and angular dependence in SEGR [power MOSFETs]","authors":"I. Mouret, M. Calvet, P. Calvel, P. Tastet, M. Allenspach, K. Label, J. Titus, C. Wheatley, peixiong zhao, K. Galloway","doi":"10.1109/RADECS.1995.509796","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509796","url":null,"abstract":"The temperature and angular dependence of Single-Event Gate Rupture (SEGR) experiments show that a normal incident angle favors SEGR and elevated temperature is insignificant. Both the oxide and substrate response play a major role in determining the SEGR sensitivity of power MOSFETs.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131859609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Evaluation of GaAs low noise and power MMIC technologies to neutron, ionizing dose and dose rate effects GaAs低噪声和功率MMIC技术对中子、电离剂量和剂量率效应的评价
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509794
H. Derewonko, A. Bosella, G. Pataut, D. Perie, J. Pinsard, C. Sentuberry, C. Verbeck, P. Bressy, P. Augier
{"title":"Evaluation of GaAs low noise and power MMIC technologies to neutron, ionizing dose and dose rate effects","authors":"H. Derewonko, A. Bosella, G. Pataut, D. Perie, J. Pinsard, C. Sentuberry, C. Verbeck, P. Bressy, P. Augier","doi":"10.1109/RADECS.1995.509794","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509794","url":null,"abstract":"An evaluation programme of Thomson CSF-TCS GaAs low noise and power MMIC technologies to 1 MeV equivalent neutron fluence levels, up to 1/spl times/10/sup 15/ n/cm/sup 2/, ionizing 1.17-1.33 MeV Co/sup 60/ dose levels in excess of 200 Mrad(GaAs) and dose rate levels reaching 1.89/spl times/10/sup 11/ rad(GaAs)/s is presented in terms of proper components and parameter choices, DC/RF electrical measurements and test methods under irradiation. Experimental results are explained together with drift analyses of electrical parameters that have determined threshold limits of component degradations. Modelling the effects of radiation on GaAs components relies on degradation analysis of active layer which appears to be the most sensitive factor. MMIC's degradation under neutron fluence was simulated from irradiated FET data. Finally, based on sensitivity of technological parameters, rad-hard design including material, technology and MMIC design enhancement is discussed.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133001835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Radiation tests on BCD100 smart power technology BCD100智能电源技术的辐射测试
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509791
P. Tastet, J. Garnier, L. Garraud, P. Chabannes, J.P. David, P. Millan
{"title":"Radiation tests on BCD100 smart power technology","authors":"P. Tastet, J. Garnier, L. Garraud, P. Chabannes, J.P. David, P. Millan","doi":"10.1109/RADECS.1995.509791","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509791","url":null,"abstract":"Since BCD100 Smart Power technology may be of interest for space applications, we have characterized the TSXKFC481A test vehicle under radiation (total dose and heavy ions).","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"913 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116405781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
LHC power diodes irradiated at 77 K in the field of a high energy accelerator 大功率强子对撞机功率二极管在77 K高能加速器场辐照
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509760
V. Berland, A. Gharib, D. Hageborn, M. Tavlet
{"title":"LHC power diodes irradiated at 77 K in the field of a high energy accelerator","authors":"V. Berland, A. Gharib, D. Hageborn, M. Tavlet","doi":"10.1109/RADECS.1995.509760","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509760","url":null,"abstract":"In the framework of the LHC research at CERN, the silicon power diodes used for superconducting magnet protection must be tested in radiative environment such as high energy particle accelerator. Diode samples have been irradiated at 77 K, near a conversion target in the TCC2 area of the SPS at CERN. using a mixed irradiation (gamma rays and neutrons).","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125252410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Radiation source dependence of degradation and recovery of irradiated Si/sub 1-x/Ge/sub x/ epitaxial devices 辐照Si/sub -x/Ge/sub -x/外延器件降解和恢复的辐射源依赖性
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509753
H. Ohyama, J. Vanhellemont, Y. Takami, K. Hayama, H. Sunaga, J. Poortmans, M. Caymax
{"title":"Radiation source dependence of degradation and recovery of irradiated Si/sub 1-x/Ge/sub x/ epitaxial devices","authors":"H. Ohyama, J. Vanhellemont, Y. Takami, K. Hayama, H. Sunaga, J. Poortmans, M. Caymax","doi":"10.1109/RADECS.1995.509753","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509753","url":null,"abstract":"The degradation and recovery of irradiated n/sup +/-Si/p/sup +/-Si/sub 1-x/Ge/sub x/ epitaxial diodes and n/sup +/-Si/p/sup +/-Si/sub 1-x/Ge/sub x//n-Si epitaxial heterojunction bipolar transistors (HBTs) are studied as a function of fluence and germanium content. The degradation of electrical performance of the devices increases with increasing fluence, while it decreases with increasing germanium content. In the Si/sub 1-x/Ge/sub x/ epitaxial layer of devices, an electron capture level which is associated with interstitial boron, is induced. The impact of radiation source on the degradation of performance is correlated with simulations of numbers of knock-on atoms and the nonionizing energy loss. From the experiment of isochronal thermal annealing, it is concluded that the electron capture levels are mainly responsible for the degradation of electrical performance.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125941110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The radiation-induced absorption band at 600 nm and its impact in fibroscopy 600 nm辐射诱导吸收带及其对纤维镜检查的影响
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509829
O. Deparis, P. Mégret, M. Decréton, M. Blondel
{"title":"The radiation-induced absorption band at 600 nm and its impact in fibroscopy","authors":"O. Deparis, P. Mégret, M. Decréton, M. Blondel","doi":"10.1109/RADECS.1995.509829","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509829","url":null,"abstract":"Pure silica core multimode step-index fibres with high OH and low OH contents were irradiated up to /spl ap/2.5 MGy in order to test their gamma-radiation resistance in the visible range. To achieve this dose, two successive irradiations at dose rates of /spl ap/0.3 kGy/h and /spl ap/24.0 kGy/h were conducted in the CMF gamma irradiation facility of SCK/spl middot/CEN, Mol, Belgium. The radiation-induced attenuation was measured continuously during and after irradiations from 400 nm to 1200 nm. The radiation-induced absorption band at 600 nm was observed in both types of fibre. A saturation of its growth occurred during the first irradiation and persisted during the next irradiation at higher dose rate. This might reveal a hardening phenomenon due to the first irradiation. Radiation-induced attenuation maximum values of 0.5 dB/m and 1.2 dB/m were found at 600 nm for the high-OH and low-OH types respectively. In fibroscopy this radiation-induced absorption band at 600 nm will be a limiting factor. However the radiation resistance improvement after a first irradiation would bring potential benefits.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126190679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
0.6 /spl mu/m CMOS technology with radiation tolerant features application to 8 K/spl times/16 dual port RAM and sea of gates 0.6 /spl mu/m CMOS技术，具有耐辐射特性，适用于8 K/spl次/16双端口RAM和栅极海
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509770
T. Corbiere, V. Lassere, B. Thomas, S. Hachad, R. Ecoffet, S. Duzellier
{"title":"0.6 /spl mu/m CMOS technology with radiation tolerant features application to 8 K/spl times/16 dual port RAM and sea of gates","authors":"T. Corbiere, V. Lassere, B. Thomas, S. Hachad, R. Ecoffet, S. Duzellier","doi":"10.1109/RADECS.1995.509770","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509770","url":null,"abstract":"After recalling options selected to harden a 0.6 /spl mu/m CMOS technology against the two major radiation concerns of the space environment, total dose and heavy ion induced latch-up, thus highlighting the dual use approach in place at MATRA MHS, the authors report data gathered during radiation tests of dual port RAM and sea of gates circuits. The impact of the dimension of various storing elements on the upset sensitivity is assessed. Finally, with regard to the trend of reducing global power consumption of spaceborne applications while increasing overall performance, the pro and cons of using a reduced 3.3 V power supply are explored.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128029904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Widening the range in measuring neutron fluences with PIN silicon diodes 扩大PIN硅二极管测量中子影响的范围
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509823
J. Morin, J. Arnoud, J. David, P. Zyromski
{"title":"Widening the range in measuring neutron fluences with PIN silicon diodes","authors":"J. Morin, J. Arnoud, J. David, P. Zyromski","doi":"10.1109/RADECS.1995.509823","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509823","url":null,"abstract":"Widening the range in measuring 1 MeV(Si) neutron fluences from 10/sup 9/ to 10/sup 13/ n.cm/sup -2/ is obtained from a new reading system associated with an improved procedure (by heating the diodes). Results associated with different neutron sources are given using the displacement Kerma approved by ASTM E 722-93.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121984024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
SPICE data base for neutron (1 MeV) radiation hardening design: permanent damage effects simulation of bipolar transistors 中子(1mev)辐射硬化设计的SPICE数据库:双极晶体管永久损伤效应模拟
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509771
O. Rinaudo, T. Zimmer, S. Limtouch, G. Bourgoin, P. Lalande
{"title":"SPICE data base for neutron (1 MeV) radiation hardening design: permanent damage effects simulation of bipolar transistors","authors":"O. Rinaudo, T. Zimmer, S. Limtouch, G. Bourgoin, P. Lalande","doi":"10.1109/RADECS.1995.509771","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509771","url":null,"abstract":"This paper presents a methodology which predicts quite easily neutron irradiated SPICE model parameters for BJT's. This methodolgy is based on both the well-known neutron irradiation theory and the SPICE model. It has been demonstrated that the impact of neutron irradiation can be described through a modification of the unirradiated SPICE parameters without changing the intrinsic SPICE model.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125004570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
The use of charge-pumping for characterizing irradiated power MOSFETs 使用电荷泵送来表征辐照功率mosfet
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509782
G. Prevosti, P. Augier, J. Palau
{"title":"The use of charge-pumping for characterizing irradiated power MOSFETs","authors":"G. Prevosti, P. Augier, J. Palau","doi":"10.1109/RADECS.1995.509782","DOIUrl":"https://doi.org/10.1109/RADECS.1995.509782","url":null,"abstract":"A charge-pumping technique is proposed for characterizing radiation-induced interface traps in vertical power MOSFETs. An original setup allowing measurements on these 3-contact devices is presented. The first experimental results before and after irradiation are discussed.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"448 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123277407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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