扩大PIN硅二极管测量中子影响的范围

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI:10.1109/RADECS.1995.509823

J. Morin, J. Arnoud, J. David, P. Zyromski

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引用次数: 4

摘要

扩大测量1 MeV(Si)中子影响的范围，从10/sup 9/到10/sup 13/ n.cm/sup -2/，这是通过与改进的程序(通过加热二极管)相关的新读数系统获得的。使用ASTM E 722-93认可的Kerma位移给出了与不同中子源相关的结果。

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Widening the range in measuring neutron fluences with PIN silicon diodes

Widening the range in measuring 1 MeV(Si) neutron fluences from 10/sup 9/ to 10/sup 13/ n.cm/sup -2/ is obtained from a new reading system associated with an improved procedure (by heating the diodes). Results associated with different neutron sources are given using the displacement Kerma approved by ASTM E 722-93.

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Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems

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