Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems最新文献_第3页

X-radiation response of SIMOX buried oxides: influence of the fabrication process SIMOX埋置氧化物的x射线响应:制备工艺的影响

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509768

P. Paillet, J. Autran, O. Flament, J. Leray, B. Aspar, A. Auberton-Herve

引用次数: 16

Single event effect characteristics of CMOS devices employing various epi-layer thicknesses 不同外延层厚度CMOS器件的单事件效应特性

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509787

K. Label, D. Hawkins, J. A. Kinnison, W.P. Stapor, P. Marshall

引用次数: 5

An experimental survey of heavy ion induced dielectric rupture in Actel field programmable gate arrays (FPGAs) Actel现场可编程门阵列(fpga)中重离子诱导介电破裂的实验研究

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509814

G. Swift, R. Katz

引用次数: 30

Behaviour of the future LHC magnet protection diodes irradiated in a nuclear reactor at 4.6 K with intermediate annealing 未来大型强子对撞机磁保护二极管在核反应堆4.6 K辐照下的中间退火行为

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509761

V. Berland, D. Hagedorn, H. Gerstenberg

引用次数: 2

Electrical and optical response of a laser diode to transient ionizing radiation 激光二极管对瞬态电离辐射的电学和光学响应

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509834

J. Baggio, C. Brisset, J. L. Sommer, C. D'hose, P. Lalande, J. Leray, O. Musseau

引用次数: 5

Effects of reliability screens on MOS charge trapping 可靠性屏对MOS电荷俘获的影响

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509777

M. Shaneyfelt, P. Winokur, D. Fleetwood, J. Schwank, R. A. Reber

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引用次数: 36

A radiation tolerant 0.6 /spl mu/m CMOS technology 采用耐辐射0.6 /spl μ m CMOS技术

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509764

V. Lasserre, T. Corbiere, B. Thomas, K. Rodde

引用次数: 4

Dynamic single event effects in a CMOS/thick SOI shift register CMOS/厚SOI移位寄存器中的动态单事件效应

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509799

F. Gardic, O. Flament, O. Musseau, C. Brisset, M. Martinez, J.P. Brunet, L. Blanquart

引用次数: 7

Forward and reverse characteristics of irradiated MOSFETs 辐照mosfet的正向和反向特性

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509746

A. Paccagnella, M. Ceschia, G. Verzellesi, G. Dalla Betta, P. Bellutti, P. Fuochi, G. Soncini

引用次数: 4

Impact ionization influence on the photocurrent of an irradiated junction 冲击电离对辐照结光电流的影响

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI: 10.1109/RADECS.1995.509751

C. Sudre, F. Pelanchon, Y. Moreau, J. Palau, J. Gasiot

引用次数: 0