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Forward and reverse characteristics of irradiated MOSFETs

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI:10.1109/RADECS.1995.509746
A. Paccagnella, M. Ceschia, G. Verzellesi, G. Dalla Betta, P. Bellutti, P. Fuochi, G. Soncini
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引用次数: 4

Abstract

pMOSFETs biased with V/sub gs/
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辐照mosfet的正向和反向特性
在Co/sup 60/ /spl γ /辐照下，偏置V/sub / gs/
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems
Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems
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