A radiation tolerant 0.6 /spl mu/m CMOS technology

Abstract

Modifications of the standard fabrication techniques of the 0.6 /spl mu/m CMOS technology lead to a radiation tolerant process in terms of immunity to total dose effects (up to 500 Gy) and to latchup under heavy ions (LET up to 100 MeV/(mg/cm/sup 2/)). In this paper, the process development and the evolution of device parameters as a function of total dose are presented.