SEGR[功率mosfet]中温度和角度依赖性的实验证据

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI:10.1109/RADECS.1995.509796

I. Mouret, M. Calvet, P. Calvel, P. Tastet, M. Allenspach, K. Label, J. Titus, C. Wheatley, peixiong zhao, K. Galloway

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引用次数: 4

摘要

单事件门破裂(SEGR)实验的温度和角度依赖性表明，正入射角有利于SEGR，升高的温度不显著。氧化物和衬底响应在决定功率mosfet的SEGR灵敏度中起主要作用。

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Experimental evidence of the temperature and angular dependence in SEGR [power MOSFETs]

The temperature and angular dependence of Single-Event Gate Rupture (SEGR) experiments show that a normal incident angle favors SEGR and elevated temperature is insignificant. Both the oxide and substrate response play a major role in determining the SEGR sensitivity of power MOSFETs.

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Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems

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