{"title":"双极电晶体表面贴装与标准封装之辐射效应比较","authors":"S.L. Pater, R. Sharp","doi":"10.1109/RADECS.1995.509772","DOIUrl":null,"url":null,"abstract":"Gamma radiation total dose effects on unbiased bipolar transistors in both surface mount and standard packages have been assessed. Total doses of up to 1 MGy have been covered at a dose rate of 12.6 kGy[H/sub 2/O]/hr, using a cobalt-60 source. No significant differences in the radiation effects between the two package styles were observed.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Gamma radiation effects on bipolar transistors a comparison of surface mount and standard packages\",\"authors\":\"S.L. Pater, R. Sharp\",\"doi\":\"10.1109/RADECS.1995.509772\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Gamma radiation total dose effects on unbiased bipolar transistors in both surface mount and standard packages have been assessed. Total doses of up to 1 MGy have been covered at a dose rate of 12.6 kGy[H/sub 2/O]/hr, using a cobalt-60 source. No significant differences in the radiation effects between the two package styles were observed.\",\"PeriodicalId\":310087,\"journal\":{\"name\":\"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-09-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RADECS.1995.509772\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADECS.1995.509772","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Gamma radiation effects on bipolar transistors a comparison of surface mount and standard packages
Gamma radiation total dose effects on unbiased bipolar transistors in both surface mount and standard packages have been assessed. Total doses of up to 1 MGy have been covered at a dose rate of 12.6 kGy[H/sub 2/O]/hr, using a cobalt-60 source. No significant differences in the radiation effects between the two package styles were observed.