双极电晶体表面贴装与标准封装之辐射效应比较

S.L. Pater, R. Sharp
{"title":"双极电晶体表面贴装与标准封装之辐射效应比较","authors":"S.L. Pater, R. Sharp","doi":"10.1109/RADECS.1995.509772","DOIUrl":null,"url":null,"abstract":"Gamma radiation total dose effects on unbiased bipolar transistors in both surface mount and standard packages have been assessed. Total doses of up to 1 MGy have been covered at a dose rate of 12.6 kGy[H/sub 2/O]/hr, using a cobalt-60 source. No significant differences in the radiation effects between the two package styles were observed.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Gamma radiation effects on bipolar transistors a comparison of surface mount and standard packages\",\"authors\":\"S.L. Pater, R. Sharp\",\"doi\":\"10.1109/RADECS.1995.509772\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Gamma radiation total dose effects on unbiased bipolar transistors in both surface mount and standard packages have been assessed. Total doses of up to 1 MGy have been covered at a dose rate of 12.6 kGy[H/sub 2/O]/hr, using a cobalt-60 source. No significant differences in the radiation effects between the two package styles were observed.\",\"PeriodicalId\":310087,\"journal\":{\"name\":\"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-09-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RADECS.1995.509772\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADECS.1995.509772","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

对表面贴装和标准封装的无偏双极晶体管的伽玛辐射总剂量效应进行了评估。使用钴-60源,以12.6千戈瑞[H/sub 2/O]/小时的剂量率覆盖了高达1毫戈瑞的总剂量。两种包装方式的辐射效应无显著差异。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Gamma radiation effects on bipolar transistors a comparison of surface mount and standard packages
Gamma radiation total dose effects on unbiased bipolar transistors in both surface mount and standard packages have been assessed. Total doses of up to 1 MGy have been covered at a dose rate of 12.6 kGy[H/sub 2/O]/hr, using a cobalt-60 source. No significant differences in the radiation effects between the two package styles were observed.
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