Gamma-ray irradiation induced degradation in ultra-thin silica layers

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI:10.1109/RADECS.1995.509755

A. Aassime, G. Sarrabayrouse, G. Salace, C. Petit

引用次数: 1

Abstract

In this paper, the influence of gamma irradiation (unbiased devices) on the electrical properties of Metal-Oxide-Semiconductor (MOS) devices with an ultra-thin silica layer N/sub 2/O-nitrided or not is investigated. Mainly electron trapping, defects generation and breakdown during electrical stress are studied.

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伽玛射线辐照诱导超薄二氧化硅层降解

本文研究了γ辐照(无偏器件)对N/sub / o -氮化或未氮化超薄硅层金属氧化物半导体(MOS)器件电性能的影响。主要研究了电应力过程中的电子俘获、缺陷产生和击穿。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems

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