涉及在剂量率事件中SRAM行为的设计和制造过程的研究

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI:10.1109/RADECS.1995.509819

R. Marec, P. Mary, R. Gaillard, J. Palau, G. Bruguier, J. Gasiot

{"title":"涉及在剂量率事件中SRAM行为的设计和制造过程的研究","authors":"R. Marec, P. Mary, R. Gaillard, J. Palau, G. Bruguier, J. Gasiot","doi":"10.1109/RADECS.1995.509819","DOIUrl":null,"url":null,"abstract":"The experimental results analysis of TS4T1601 SRAMs in standby mode and electrical simulations show that the SRAM design and some slight mask misalignments during the fabrication process are dominant factors concerning the dose-rate upset patterns and thresholds.","PeriodicalId":310087,"journal":{"name":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A study involving the design and the fabrication process on the SRAM behaviour during a dose-rate event\",\"authors\":\"R. Marec, P. Mary, R. Gaillard, J. Palau, G. Bruguier, J. Gasiot\",\"doi\":\"10.1109/RADECS.1995.509819\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The experimental results analysis of TS4T1601 SRAMs in standby mode and electrical simulations show that the SRAM design and some slight mask misalignments during the fabrication process are dominant factors concerning the dose-rate upset patterns and thresholds.\",\"PeriodicalId\":310087,\"journal\":{\"name\":\"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-09-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RADECS.1995.509819\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADECS.1995.509819","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

待机状态下TS4T1601 SRAM的实验结果分析和电学仿真表明，SRAM的设计和制造过程中一些轻微的掩模错位是影响剂量率扰动模式和阈值的主要因素。

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A study involving the design and the fabrication process on the SRAM behaviour during a dose-rate event

The experimental results analysis of TS4T1601 SRAMs in standby mode and electrical simulations show that the SRAM design and some slight mask misalignments during the fabrication process are dominant factors concerning the dose-rate upset patterns and thresholds.

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Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems

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