Interpretation of heavy ion cross section measurements

Abstract

This paper discusses the information about a device that is contained in the experimental heavy ion cross section curve. The width and shape of the curve are shown to be determined by intra-cell variations of charge collection, not by cell to cell variations. If we assume that there is a unique charge that must appear on the transistor terminal, then the cross section may be described in terms of variation of effective charge collection depth across the device. Contours of constant charge collection can be determined from the parameters that describe the cross section curve. The effects of diffusion can be distinguished from the other charge collection processes.